Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy

Yongsheng Gui; Biao Li; Guozhen Zheng; Shaoling Guo; Junhao Chu; S. Oehling; C. R. Becker; G. Landwehr

doi:10.1063/1.368932

Transport properties of Hg_0.80Mg_0.20Te grown by molecular beam epitaxy

Yongsheng Gui, Biao Li, Guozhen Zheng, Shaoling Guo, Junhao Chu, S. Oehling, C. R. Becker, G. Landwehr

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Abstract

Variable magnetic-field Hall measurement has been used to investigate the transport properties in Hg_0.80Mg_0.20Te molecular beam epitaxy films in the temperature range from 1.5 to 250 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS+MCF approach show three- and two-dimensional electronic behaviors. The two-dimensional electrons, with mobility in the range of 1-3 × 10³ cm²/V s and a sheet density about 10¹² cm^-2, are found and come from an accumulation layer near the HgMgTe-CdTe interface or the HgMgTe-vacuum interface. The temperature-dependent evolution of the bulk electron mobility indicates that the scattering mechanism in HgMgTe is very similar to that in HgCdTe, that is, ionized impurity scattering dominates at low temperature while lattice scattering dominates above 100 K.

Original language	English
Pages (from-to)	6170-6173
Number of pages	4
Journal	Journal of Applied Physics
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.368932
State	Published - 1 Dec 1998
Externally published	Yes

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title = "Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy",

abstract = "Variable magnetic-field Hall measurement has been used to investigate the transport properties in Hg0.80Mg0.20Te molecular beam epitaxy films in the temperature range from 1.5 to 250 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS+MCF approach show three- and two-dimensional electronic behaviors. The two-dimensional electrons, with mobility in the range of 1-3 × 103 cm2/V s and a sheet density about 1012 cm-2, are found and come from an accumulation layer near the HgMgTe-CdTe interface or the HgMgTe-vacuum interface. The temperature-dependent evolution of the bulk electron mobility indicates that the scattering mechanism in HgMgTe is very similar to that in HgCdTe, that is, ionized impurity scattering dominates at low temperature while lattice scattering dominates above 100 K.",

author = "Yongsheng Gui and Biao Li and Guozhen Zheng and Shaoling Guo and Junhao Chu and S. Oehling and Becker, \{C. R.\} and G. Landwehr",

year = "1998",

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doi = "10.1063/1.368932",

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T1 - Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy

AU - Gui, Yongsheng

AU - Li, Biao

AU - Zheng, Guozhen

AU - Guo, Shaoling

AU - Chu, Junhao

AU - Oehling, S.

AU - Becker, C. R.

AU - Landwehr, G.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Variable magnetic-field Hall measurement has been used to investigate the transport properties in Hg0.80Mg0.20Te molecular beam epitaxy films in the temperature range from 1.5 to 250 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS+MCF approach show three- and two-dimensional electronic behaviors. The two-dimensional electrons, with mobility in the range of 1-3 × 103 cm2/V s and a sheet density about 1012 cm-2, are found and come from an accumulation layer near the HgMgTe-CdTe interface or the HgMgTe-vacuum interface. The temperature-dependent evolution of the bulk electron mobility indicates that the scattering mechanism in HgMgTe is very similar to that in HgCdTe, that is, ionized impurity scattering dominates at low temperature while lattice scattering dominates above 100 K.

AB - Variable magnetic-field Hall measurement has been used to investigate the transport properties in Hg0.80Mg0.20Te molecular beam epitaxy films in the temperature range from 1.5 to 250 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov-de Haas measurements and the hybrid MS+MCF approach show three- and two-dimensional electronic behaviors. The two-dimensional electrons, with mobility in the range of 1-3 × 103 cm2/V s and a sheet density about 1012 cm-2, are found and come from an accumulation layer near the HgMgTe-CdTe interface or the HgMgTe-vacuum interface. The temperature-dependent evolution of the bulk electron mobility indicates that the scattering mechanism in HgMgTe is very similar to that in HgCdTe, that is, ionized impurity scattering dominates at low temperature while lattice scattering dominates above 100 K.

UR - https://www.scopus.com/pages/publications/0042342647

U2 - 10.1063/1.368932

DO - 10.1063/1.368932

M3 - 文章

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SN - 0021-8979

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SP - 6170

EP - 6173

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Transport properties of Hg_0.80Mg_0.20Te grown by molecular beam epitaxy

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