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Transport properties of AlGaAs/GaAs parabolic quantum wells

  • K. H. Gao
  • , G. Yu*
  • , Y. M. Zhou
  • , W. Z. Zhou
  • , T. Lin
  • , J. H. Chu
  • , N. Dai
  • , A. J. Springthorpe
  • , D. G. Austing
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics
  • East China Normal University
  • National Research Council of Canada

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the magnetotransport properties of 100 nm wide parabolic quantum wells and observe an enhancement of the Hall resistance in one sample but not the other. This phenomenon is likely related to the effective thickness of the electronic slab. We also observe a parabolic negative magnetoresistance originating from electron-electron interactions when only one subband is occupied in one of the samples. The interaction correction to the Drude conductivity is extracted using two methods. We find that the extracted interaction correction increases with increasing tilted angle, for which two possible explanations are given.

Original languageEnglish
Article number013712
JournalJournal of Applied Physics
Volume105
Issue number1
DOIs
StatePublished - 2009
Externally publishedYes

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