Transport properties of a spin-split two-dimensional electron gas in an In0.53 Ga0.47 As/InP quantum well structure

Y. M. Zhou; L. Y. Shang; G. Yu; K. H. Gao; W. Z. Zhou; T. Lin; S. L. Guo; J. H. Chu; N. Dai; D. G. Austing

doi:10.1063/1.3244613

Transport properties of a spin-split two-dimensional electron gas in an In_0.53 Ga_0.47 As/InP quantum well structure

Y. M. Zhou
, L. Y. Shang
, G. Yu
, K. H. Gao
, W. Z. Zhou
, T. Lin
, S. L. Guo
, J. H. Chu
, N. Dai
, D. G. Austing

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We study the magnetotransport properties of a gated In_0.53 Ga_0.47 As/InP quantum well structure in the presence of spin splitting when only one electronic subband is occupied. We develop an analytical method to extract the quantum mobilities for the two spin subbands. Ionized impurity scattering and alloy disorder scattering are determined to be important in this system. Larger quantum mobility is found for the higher-energy spin subband. We also demonstrate that the difference between the quantum mobilities for the two spin subbands can be altered with the gate.

Original language	English
Article number	073722
Journal	Journal of Applied Physics
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.3244613
State	Published - 2009
Externally published	Yes

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@article{81e35ecf05594441890c04a7a6854f3a,

title = "Transport properties of a spin-split two-dimensional electron gas in an In0.53 Ga0.47 As/InP quantum well structure",

abstract = "We study the magnetotransport properties of a gated In0.53 Ga0.47 As/InP quantum well structure in the presence of spin splitting when only one electronic subband is occupied. We develop an analytical method to extract the quantum mobilities for the two spin subbands. Ionized impurity scattering and alloy disorder scattering are determined to be important in this system. Larger quantum mobility is found for the higher-energy spin subband. We also demonstrate that the difference between the quantum mobilities for the two spin subbands can be altered with the gate.",

author = "Zhou, \{Y. M.\} and Shang, \{L. Y.\} and G. Yu and Gao, \{K. H.\} and Zhou, \{W. Z.\} and T. Lin and Guo, \{S. L.\} and Chu, \{J. H.\} and N. Dai and Austing, \{D. G.\}",

year = "2009",

doi = "10.1063/1.3244613",

language = "英语",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Transport properties of a spin-split two-dimensional electron gas in an In0.53 Ga0.47 As/InP quantum well structure

AU - Zhou, Y. M.

AU - Shang, L. Y.

AU - Yu, G.

AU - Gao, K. H.

AU - Zhou, W. Z.

AU - Lin, T.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Dai, N.

AU - Austing, D. G.

PY - 2009

Y1 - 2009

N2 - We study the magnetotransport properties of a gated In0.53 Ga0.47 As/InP quantum well structure in the presence of spin splitting when only one electronic subband is occupied. We develop an analytical method to extract the quantum mobilities for the two spin subbands. Ionized impurity scattering and alloy disorder scattering are determined to be important in this system. Larger quantum mobility is found for the higher-energy spin subband. We also demonstrate that the difference between the quantum mobilities for the two spin subbands can be altered with the gate.

AB - We study the magnetotransport properties of a gated In0.53 Ga0.47 As/InP quantum well structure in the presence of spin splitting when only one electronic subband is occupied. We develop an analytical method to extract the quantum mobilities for the two spin subbands. Ionized impurity scattering and alloy disorder scattering are determined to be important in this system. Larger quantum mobility is found for the higher-energy spin subband. We also demonstrate that the difference between the quantum mobilities for the two spin subbands can be altered with the gate.

UR - https://www.scopus.com/pages/publications/70350153781

U2 - 10.1063/1.3244613

DO - 10.1063/1.3244613

M3 - 文章

AN - SCOPUS:70350153781

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073722

ER -

Transport properties of a spin-split two-dimensional electron gas in an In_0.53 Ga_0.47 As/InP quantum well structure

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