Transparent polycrystalline monoclinic HfO 2 dielectrics prepared by plasma assisted pulsed laser deposition

Zhifeng Ying; Jian Sun; Zhigao Hu; Wenlei Yu; Ning Xu; Jiada Wu

doi:10.1116/1.3673783

Transparent polycrystalline monoclinic HfO ₂ dielectrics prepared by plasma assisted pulsed laser deposition

Zhifeng Ying, Jian Sun, Zhigao Hu, Wenlei Yu, Ning Xu, Jiada Wu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The electrical properties of transparent polycrystalline monoclinic HfO ₂ dielectrics prepared by plasma assisted pulsed laser deposition were studied. The capacitance-voltage and leakage current-voltage characteristics of the capacitors incorporating HfO ₂ dielectrics were examined in terms of the structural, optical properties of the HfO ₂ layers. The interfacial properties between the HfO ₂ layer and the Si substrate were also examined. The HfO ₂ layers showed excellent thermal stability both in the HfO ₂ structure and in the HfO ₂/Si interface. The capacitance-voltage characteristics showed improvements through thermal annealing with a slight increase of leakage current. With an equivalent oxide thickness of 4.7 nm, the 700 C annealed HfO ₂ dielectrics had a dielectric constant of 16.5 and leakage current densities of 9.8 10 ^-8 and 9.2 10 ^-7 A/cm ² at dielectric fields of 0.75 and -0.75 MV/cm, respectively.

Original language	English
Article number	011506
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	30
Issue number	1
DOIs	https://doi.org/10.1116/1.3673783
State	Published - Jan 2012

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title = "Transparent polycrystalline monoclinic HfO 2 dielectrics prepared by plasma assisted pulsed laser deposition",

abstract = "The electrical properties of transparent polycrystalline monoclinic HfO 2 dielectrics prepared by plasma assisted pulsed laser deposition were studied. The capacitance-voltage and leakage current-voltage characteristics of the capacitors incorporating HfO 2 dielectrics were examined in terms of the structural, optical properties of the HfO 2 layers. The interfacial properties between the HfO 2 layer and the Si substrate were also examined. The HfO 2 layers showed excellent thermal stability both in the HfO 2 structure and in the HfO 2/Si interface. The capacitance-voltage characteristics showed improvements through thermal annealing with a slight increase of leakage current. With an equivalent oxide thickness of 4.7 nm, the 700 C annealed HfO 2 dielectrics had a dielectric constant of 16.5 and leakage current densities of 9.8 10 -8 and 9.2 10 -7 A/cm 2 at dielectric fields of 0.75 and -0.75 MV/cm, respectively.",

author = "Zhifeng Ying and Jian Sun and Zhigao Hu and Wenlei Yu and Ning Xu and Jiada Wu",

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T1 - Transparent polycrystalline monoclinic HfO 2 dielectrics prepared by plasma assisted pulsed laser deposition

AU - Ying, Zhifeng

AU - Sun, Jian

AU - Hu, Zhigao

AU - Yu, Wenlei

AU - Xu, Ning

AU - Wu, Jiada

PY - 2012/1

Y1 - 2012/1

N2 - The electrical properties of transparent polycrystalline monoclinic HfO 2 dielectrics prepared by plasma assisted pulsed laser deposition were studied. The capacitance-voltage and leakage current-voltage characteristics of the capacitors incorporating HfO 2 dielectrics were examined in terms of the structural, optical properties of the HfO 2 layers. The interfacial properties between the HfO 2 layer and the Si substrate were also examined. The HfO 2 layers showed excellent thermal stability both in the HfO 2 structure and in the HfO 2/Si interface. The capacitance-voltage characteristics showed improvements through thermal annealing with a slight increase of leakage current. With an equivalent oxide thickness of 4.7 nm, the 700 C annealed HfO 2 dielectrics had a dielectric constant of 16.5 and leakage current densities of 9.8 10 -8 and 9.2 10 -7 A/cm 2 at dielectric fields of 0.75 and -0.75 MV/cm, respectively.

AB - The electrical properties of transparent polycrystalline monoclinic HfO 2 dielectrics prepared by plasma assisted pulsed laser deposition were studied. The capacitance-voltage and leakage current-voltage characteristics of the capacitors incorporating HfO 2 dielectrics were examined in terms of the structural, optical properties of the HfO 2 layers. The interfacial properties between the HfO 2 layer and the Si substrate were also examined. The HfO 2 layers showed excellent thermal stability both in the HfO 2 structure and in the HfO 2/Si interface. The capacitance-voltage characteristics showed improvements through thermal annealing with a slight increase of leakage current. With an equivalent oxide thickness of 4.7 nm, the 700 C annealed HfO 2 dielectrics had a dielectric constant of 16.5 and leakage current densities of 9.8 10 -8 and 9.2 10 -7 A/cm 2 at dielectric fields of 0.75 and -0.75 MV/cm, respectively.

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Transparent polycrystalline monoclinic HfO ₂ dielectrics prepared by plasma assisted pulsed laser deposition

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