Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates

Yanwei Huang; Dezeng Li; Jiahan Feng; Guifeng Li; Qun Zhang

doi:10.1007/s10971-010-2182-0

Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates

Yanwei Huang
, Dezeng Li
, Jiahan Feng
, Guifeng Li
, Qun Zhang^*

^*Corresponding author for this work

Fudan University
Tongji University

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Transparent conductive tungsten-doped tin oxide (SnO₂:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 × 10^-3 ohm cm was obtained, with the carrier mobility of 14.2 cm² V^-1 s^-1 and carrier concentration of 7.6 × 10¹⁹ cm^-3 in 3 at.% W-doping films annealed at 850 °C in air. The structural properties, surface morphology and chemical states for the films were investigated.

Original language	English
Pages (from-to)	276-281
Number of pages	6
Journal	Journal of Sol-Gel Science and Technology
Volume	54
Issue number	3
DOIs	https://doi.org/10.1007/s10971-010-2182-0
State	Published - Jun 2010
Externally published	Yes

Keywords

Sol-gel technique
Thin films
Transparent conductive oxide (TCO)
Tungsten-doped tin oxide

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10.1007/s10971-010-2182-0

Cite this

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title = "Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates",

abstract = "Transparent conductive tungsten-doped tin oxide (SnO2:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90\% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 {\texttimes} 10-3 ohm cm was obtained, with the carrier mobility of 14.2 cm2 V-1 s-1 and carrier concentration of 7.6 {\texttimes} 1019 cm-3 in 3 at.\% W-doping films annealed at 850 °C in air. The structural properties, surface morphology and chemical states for the films were investigated.",

keywords = "Sol-gel technique, Thin films, Transparent conductive oxide (TCO), Tungsten-doped tin oxide",

author = "Yanwei Huang and Dezeng Li and Jiahan Feng and Guifeng Li and Qun Zhang",

year = "2010",

month = jun,

doi = "10.1007/s10971-010-2182-0",

language = "英语",

volume = "54",

pages = "276--281",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

number = "3",

}

TY - JOUR

T1 - Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates

AU - Huang, Yanwei

AU - Li, Dezeng

AU - Feng, Jiahan

AU - Li, Guifeng

AU - Zhang, Qun

PY - 2010/6

Y1 - 2010/6

N2 - Transparent conductive tungsten-doped tin oxide (SnO2:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 × 10-3 ohm cm was obtained, with the carrier mobility of 14.2 cm2 V-1 s-1 and carrier concentration of 7.6 × 1019 cm-3 in 3 at.% W-doping films annealed at 850 °C in air. The structural properties, surface morphology and chemical states for the films were investigated.

AB - Transparent conductive tungsten-doped tin oxide (SnO2:W) thin films were synthesized on quartz glass substrates by sol-gel dip-coating method. It was found that the films were highly transparent and the average optical transmission was about 90% in the visible and near infrared region from 400 to 2,500 nm. The optical band gap is about 4.1 eV. The lowest resistivity of 5.8 × 10-3 ohm cm was obtained, with the carrier mobility of 14.2 cm2 V-1 s-1 and carrier concentration of 7.6 × 1019 cm-3 in 3 at.% W-doping films annealed at 850 °C in air. The structural properties, surface morphology and chemical states for the films were investigated.

KW - Sol-gel technique

KW - Thin films

KW - Transparent conductive oxide (TCO)

KW - Tungsten-doped tin oxide

UR - https://www.scopus.com/pages/publications/77953809031

U2 - 10.1007/s10971-010-2182-0

DO - 10.1007/s10971-010-2182-0

M3 - 文章

AN - SCOPUS:77953809031

SN - 0928-0707

VL - 54

SP - 276

EP - 281

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

IS - 3

ER -

Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz glass substrates

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Keywords

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