Transient decay of photoexcited carriers and photoluminescence efficiency in quantum wells

Shi Rong Jin; Ai Zhen Li; Jun Hao Chu; Shi Wei Chen

Transient decay of photoexcited carriers and photoluminescence efficiency in quantum wells

Shi Rong Jin^*
, Ai Zhen Li
, Jun Hao Chu
, Shi Wei Chen

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology
CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We present a phenomenological model for the recombination of photoexcited carriers in quantum wells, which takes into account of the nonradiative recombination and the screening effect of free carriers in the wells. The results show, that the decay time of photoluminescence is strongly related to the sample quality, doping level, as well as the excitation intensity.

Original language	English
Pages (from-to)	1009-1010
Number of pages	2
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	46
Issue number	5
State	Published - May 1997
Externally published	Yes

Cite this

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title = "Transient decay of photoexcited carriers and photoluminescence efficiency in quantum wells",

abstract = "We present a phenomenological model for the recombination of photoexcited carriers in quantum wells, which takes into account of the nonradiative recombination and the screening effect of free carriers in the wells. The results show, that the decay time of photoluminescence is strongly related to the sample quality, doping level, as well as the excitation intensity.",

author = "Jin, \{Shi Rong\} and Li, \{Ai Zhen\} and Chu, \{Jun Hao\} and Chen, \{Shi Wei\}",

year = "1997",

month = may,

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pages = "1009--1010",

journal = "Wuli Xuebao/Acta Physica Sinica",

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publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

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T1 - Transient decay of photoexcited carriers and photoluminescence efficiency in quantum wells

AU - Jin, Shi Rong

AU - Li, Ai Zhen

AU - Chu, Jun Hao

AU - Chen, Shi Wei

PY - 1997/5

Y1 - 1997/5

N2 - We present a phenomenological model for the recombination of photoexcited carriers in quantum wells, which takes into account of the nonradiative recombination and the screening effect of free carriers in the wells. The results show, that the decay time of photoluminescence is strongly related to the sample quality, doping level, as well as the excitation intensity.

AB - We present a phenomenological model for the recombination of photoexcited carriers in quantum wells, which takes into account of the nonradiative recombination and the screening effect of free carriers in the wells. The results show, that the decay time of photoluminescence is strongly related to the sample quality, doping level, as well as the excitation intensity.

UR - https://www.scopus.com/pages/publications/0345908540

M3 - 文章

AN - SCOPUS:0345908540

SN - 1000-3290

VL - 46

SP - 1009

EP - 1010

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 5

ER -

Transient decay of photoexcited carriers and photoluminescence efficiency in quantum wells

Abstract

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