Transfer bonding of thick silicon Nitride film via split of porous silicon

X. Q. Bao; Y. F. Ding; Y. Chen; P. S. Guo; Y. L. Shi; L. W. Wang; Z. S. Lai

doi:10.1117/12.607898

Transfer bonding of thick silicon Nitride film via split of porous silicon

X. Q. Bao
, Y. F. Ding
, Y. Chen
, P. S. Guo
, Y. L. Shi
, L. W. Wang^*
, Z. S. Lai

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.

Original language	English
Article number	135
Pages (from-to)	579-582
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607898
State	Published - 2005
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Characterization
Epoxy
PECVD silicon nitride
Radio frequency
Splitting of porous silicon
Wafer bonding

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10.1117/12.607898

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title = "Transfer bonding of thick silicon Nitride film via split of porous silicon",

abstract = "In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.",

keywords = "Characterization, Epoxy, PECVD silicon nitride, Radio frequency, Splitting of porous silicon, Wafer bonding",

author = "Bao, \{X. Q.\} and Ding, \{Y. F.\} and Y. Chen and Guo, \{P. S.\} and Shi, \{Y. L.\} and Wang, \{L. W.\} and Lai, \{Z. S.\}",

year = "2005",

doi = "10.1117/12.607898",

language = "英语",

volume = "5774",

pages = "579--582",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

TY - JOUR

T1 - Transfer bonding of thick silicon Nitride film via split of porous silicon

AU - Bao, X. Q.

AU - Ding, Y. F.

AU - Chen, Y.

AU - Guo, P. S.

AU - Shi, Y. L.

AU - Wang, L. W.

AU - Lai, Z. S.

PY - 2005

Y1 - 2005

N2 - In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.

AB - In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.

KW - Characterization

KW - Epoxy

KW - PECVD silicon nitride

KW - Radio frequency

KW - Splitting of porous silicon

KW - Wafer bonding

UR - https://www.scopus.com/pages/publications/25644434421

U2 - 10.1117/12.607898

DO - 10.1117/12.607898

M3 - 会议文章

AN - SCOPUS:25644434421

SN - 0277-786X

VL - 5774

SP - 579

EP - 582

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 135

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Transfer bonding of thick silicon Nitride film via split of porous silicon

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Keywords

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