Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Can Li Song; Yi Lin Wang; Ye Ping Jiang; Yi Zhang; Cui Zu Chang; Lili Wang; Ke He; Xi Chen; Jin Feng Jia; Yayu Wang; Zhong Fang; Xi Dai; Xin Cheng Xie; Xiao Liang Qi; Shou Cheng Zhang; Qi Kun Xue; Xucun Ma

doi:10.1063/1.3494595

Topological insulator Bi₂ Se₃ thin films grown on double-layer graphene by molecular beam epitaxy

Can Li Song^*
, Yi Lin Wang
, Ye Ping Jiang
, Yi Zhang
, Cui Zu Chang
, Lili Wang
, Ke He
, Xi Chen
, Jin Feng Jia
, Yayu Wang
, Zhong Fang
, Xi Dai
, Xin Cheng Xie
, Xiao Liang Qi
, Shou Cheng Zhang
, Qi Kun Xue
, Xucun Ma

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

175 Scopus citations

Abstract

Atomically flat thin films of topological insulator Bi₂ Se ₃ have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi₂ Se₃ films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm², and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Original language	English
Article number	143118
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3494595
State	Published - 4 Oct 2010
Externally published	Yes

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Song, C. L., Wang, Y. L., Jiang, Y. P., Zhang, Y., Chang, C. Z., Wang, L., He, K., Chen, X., Jia, J. F., Wang, Y., Fang, Z., Dai, X., Xie, X. C., Qi, X. L., Zhang, S. C., Xue, Q. K., & Ma, X. (2010). Topological insulator Bi₂ Se₃ thin films grown on double-layer graphene by molecular beam epitaxy. Applied Physics Letters, 97(14), Article 143118. https://doi.org/10.1063/1.3494595

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title = "Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy",

abstract = "Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.",

author = "Song, \{Can Li\} and Wang, \{Yi Lin\} and Jiang, \{Ye Ping\} and Yi Zhang and Chang, \{Cui Zu\} and Lili Wang and Ke He and Xi Chen and Jia, \{Jin Feng\} and Yayu Wang and Zhong Fang and Xi Dai and Xie, \{Xin Cheng\} and Qi, \{Xiao Liang\} and Zhang, \{Shou Cheng\} and Xue, \{Qi Kun\} and Xucun Ma",

year = "2010",

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day = "4",

doi = "10.1063/1.3494595",

language = "英语",

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T1 - Topological insulator Bi2 Se3 thin films grown on double-layer graphene by molecular beam epitaxy

AU - Song, Can Li

AU - Wang, Yi Lin

AU - Jiang, Ye Ping

AU - Zhang, Yi

AU - Chang, Cui Zu

AU - Wang, Lili

AU - He, Ke

AU - Chen, Xi

AU - Jia, Jin Feng

AU - Wang, Yayu

AU - Fang, Zhong

AU - Dai, Xi

AU - Xie, Xin Cheng

AU - Qi, Xiao Liang

AU - Zhang, Shou Cheng

AU - Xue, Qi Kun

AU - Ma, Xucun

PY - 2010/10/4

Y1 - 2010/10/4

N2 - Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

AB - Atomically flat thin films of topological insulator Bi2 Se 3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2 Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2× 1011 /cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

UR - https://www.scopus.com/pages/publications/77958023483

U2 - 10.1063/1.3494595

DO - 10.1063/1.3494595

M3 - 文章

AN - SCOPUS:77958023483

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143118

ER -

Topological insulator Bi₂ Se₃ thin films grown on double-layer graphene by molecular beam epitaxy

Abstract

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