TiO2 thin film crystallization temperature lowered by Cu-induced solid phase crystallization

Chang Yang; Yasushi Hirose; Shoichiro Nakao; Tetsuya Hasegawa

doi:10.1016/j.tsf.2013.12.041

TiO₂ thin film crystallization temperature lowered by Cu-induced solid phase crystallization

Chang Yang^*
, Yasushi Hirose
, Shoichiro Nakao
, Tetsuya Hasegawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We lowered the crystallization temperature of amorphous TiO₂ thin films using a Cu catalyst as either a bottom or cap layer. The Cu bottom layer reduced the crystallization temperature of TiO₂ by ~ 30 C. Depth profile analyses by Rutherford backscattering spectrometry revealed that a very small amount of Cu was sufficient to induce full crystallization of the TiO₂ film. Depositing the Cu cap layer and annealing at 210 C for 3 h yielded a transparent anatase TiO₂ thin film upon wet-etching the Cu cap.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Thin Solid Films
Volume	553
DOIs	https://doi.org/10.1016/j.tsf.2013.12.041
State	Published - 28 Feb 2014
Externally published	Yes

Keywords

Anatase thin films
Copper cap layers
Metal-induced crystallization
Titanium dioxide
Wet-etching

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10.1016/j.tsf.2013.12.041

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title = "TiO2 thin film crystallization temperature lowered by Cu-induced solid phase crystallization",

abstract = "We lowered the crystallization temperature of amorphous TiO2 thin films using a Cu catalyst as either a bottom or cap layer. The Cu bottom layer reduced the crystallization temperature of TiO2 by \textasciitilde{} 30 C. Depth profile analyses by Rutherford backscattering spectrometry revealed that a very small amount of Cu was sufficient to induce full crystallization of the TiO2 film. Depositing the Cu cap layer and annealing at 210 C for 3 h yielded a transparent anatase TiO2 thin film upon wet-etching the Cu cap.",

keywords = "Anatase thin films, Copper cap layers, Metal-induced crystallization, Titanium dioxide, Wet-etching",

author = "Chang Yang and Yasushi Hirose and Shoichiro Nakao and Tetsuya Hasegawa",

year = "2014",

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day = "28",

doi = "10.1016/j.tsf.2013.12.041",

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T1 - TiO2 thin film crystallization temperature lowered by Cu-induced solid phase crystallization

AU - Yang, Chang

AU - Hirose, Yasushi

AU - Nakao, Shoichiro

AU - Hasegawa, Tetsuya

PY - 2014/2/28

Y1 - 2014/2/28

N2 - We lowered the crystallization temperature of amorphous TiO2 thin films using a Cu catalyst as either a bottom or cap layer. The Cu bottom layer reduced the crystallization temperature of TiO2 by ~ 30 C. Depth profile analyses by Rutherford backscattering spectrometry revealed that a very small amount of Cu was sufficient to induce full crystallization of the TiO2 film. Depositing the Cu cap layer and annealing at 210 C for 3 h yielded a transparent anatase TiO2 thin film upon wet-etching the Cu cap.

AB - We lowered the crystallization temperature of amorphous TiO2 thin films using a Cu catalyst as either a bottom or cap layer. The Cu bottom layer reduced the crystallization temperature of TiO2 by ~ 30 C. Depth profile analyses by Rutherford backscattering spectrometry revealed that a very small amount of Cu was sufficient to induce full crystallization of the TiO2 film. Depositing the Cu cap layer and annealing at 210 C for 3 h yielded a transparent anatase TiO2 thin film upon wet-etching the Cu cap.

KW - Anatase thin films

KW - Copper cap layers

KW - Metal-induced crystallization

KW - Titanium dioxide

KW - Wet-etching

UR - https://www.scopus.com/pages/publications/84894907397

U2 - 10.1016/j.tsf.2013.12.041

DO - 10.1016/j.tsf.2013.12.041

M3 - 文章

AN - SCOPUS:84894907397

SN - 0040-6090

VL - 553

SP - 17

EP - 20

JO - Thin Solid Films

JF - Thin Solid Films

ER -

TiO₂ thin film crystallization temperature lowered by Cu-induced solid phase crystallization

Abstract

Keywords

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