Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

T. Bretagnon; P. Lefebvre; P. Valvin; B. Gil; C. Morhain; Xiaodong Tang

doi:10.1016/j.jcrysgro.2005.10.034

Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

T. Bretagnon, P. Lefebvre, P. Valvin, B. Gil, C. Morhain, Xiaodong Tang

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

We have investigated a series of samples embedding ZnO/(Zn,Mg)O quantum wells of different sizes, in wurtzite phase, by using time-resolved photoluminescence. The samples were grown by molecular beam epitaxy on ZnO templates, themselves deposited on sapphire substrates. The presence of large internal electric fields in these quantum wells manifests itself not only through the energies of the optical recombinations, but also through the size dependence of the recombination times. An envelope-function model that includes the variational calculation of the exciton binding energy allows us to determine a value of 0.9 MV/cm for the internal electric field.

Original language	English
Pages (from-to)	12-15
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.034
State	Published - 18 Jan 2006
Externally published	Yes
Event	Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: 3 Jul 2005 → 8 Jul 2005

Keywords

A3. Quantum wells
B1. Nanomaterials
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2005.10.034

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title = "Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells",

abstract = "We have investigated a series of samples embedding ZnO/(Zn,Mg)O quantum wells of different sizes, in wurtzite phase, by using time-resolved photoluminescence. The samples were grown by molecular beam epitaxy on ZnO templates, themselves deposited on sapphire substrates. The presence of large internal electric fields in these quantum wells manifests itself not only through the energies of the optical recombinations, but also through the size dependence of the recombination times. An envelope-function model that includes the variational calculation of the exciton binding energy allows us to determine a value of 0.9 MV/cm for the internal electric field.",

keywords = "A3. Quantum wells, B1. Nanomaterials, B2. Semiconducting II-VI materials",

author = "T. Bretagnon and P. Lefebvre and P. Valvin and B. Gil and C. Morhain and Xiaodong Tang",

year = "2006",

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doi = "10.1016/j.jcrysgro.2005.10.034",

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T1 - Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

AU - Bretagnon, T.

AU - Lefebvre, P.

AU - Valvin, P.

AU - Gil, B.

AU - Morhain, C.

AU - Tang, Xiaodong

PY - 2006/1/18

Y1 - 2006/1/18

N2 - We have investigated a series of samples embedding ZnO/(Zn,Mg)O quantum wells of different sizes, in wurtzite phase, by using time-resolved photoluminescence. The samples were grown by molecular beam epitaxy on ZnO templates, themselves deposited on sapphire substrates. The presence of large internal electric fields in these quantum wells manifests itself not only through the energies of the optical recombinations, but also through the size dependence of the recombination times. An envelope-function model that includes the variational calculation of the exciton binding energy allows us to determine a value of 0.9 MV/cm for the internal electric field.

AB - We have investigated a series of samples embedding ZnO/(Zn,Mg)O quantum wells of different sizes, in wurtzite phase, by using time-resolved photoluminescence. The samples were grown by molecular beam epitaxy on ZnO templates, themselves deposited on sapphire substrates. The presence of large internal electric fields in these quantum wells manifests itself not only through the energies of the optical recombinations, but also through the size dependence of the recombination times. An envelope-function model that includes the variational calculation of the exciton binding energy allows us to determine a value of 0.9 MV/cm for the internal electric field.

KW - A3. Quantum wells

KW - B1. Nanomaterials

KW - B2. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/29844455075

U2 - 10.1016/j.jcrysgro.2005.10.034

DO - 10.1016/j.jcrysgro.2005.10.034

M3 - 会议文章

AN - SCOPUS:29844455075

SN - 0022-0248

VL - 287

SP - 12

EP - 15

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials

Y2 - 3 July 2005 through 8 July 2005

ER -

Time resolved photoluminescence study of ZnO/(Zn,Mg)O quantum wells

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Keywords

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