TY - JOUR
T1 - Thin-film electronics based on all-2D van der Waals heterostructures
AU - Liu, Xinling
AU - Yang, Xiaomin
AU - Sang, Weihui
AU - Huang, Hai
AU - Li, Wenwu
AU - Lin, Yen Fu
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2021 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society.
PY - 2021
Y1 - 2021
N2 - Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
AB - Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.
KW - Van-der-Waals interactions
KW - all-2D heterostructure
KW - field-effect transistors (FETs)
KW - photodetectors
KW - thin-film electronics
UR - https://www.scopus.com/pages/publications/85117207273
U2 - 10.1080/15980316.2021.1982782
DO - 10.1080/15980316.2021.1982782
M3 - 文章
AN - SCOPUS:85117207273
SN - 1598-0316
VL - 22
SP - 231
EP - 245
JO - Journal of Information Display
JF - Journal of Information Display
IS - 4
ER -