Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices

Le Li; Sannian Song; Zhonghua Zhang; Yueqing Zhu; Zhitang Song; Yan Cheng; Shilong Lv; Bo Liu; Liangliang Chen

doi:10.1016/j.tsf.2015.07.056

Thickness dependent nano-crystallization in Ti_0.43Sb₂Te₃ films and its effect on devices

Le Li, Sannian Song, Zhonghua Zhang, Yueqing Zhu, Zhitang Song, Yan Cheng, Shilong Lv, Bo Liu, Liangliang Chen

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The crystallization behavior of ultrathin Ti_0.43Sb₂Te₃ (TST) films dependent on thickness was studied. As the film thickness decreases, the crystallization temperature (T_c) firstly increases in the thickness range of 10-50 nm, and then decreases when the thickness is less than 10 nm. Two factors can explain the variation trend of T_c with decreasing thickness of TST films. The increment of T_c is mainly due to the crystallization suppression originating from the increment of surface-to-volume in 10-50 nm TST films, and the decrement is dominantly attributed to the crystallization promoter of substrate/film interface in sub-10 nm TST films. The current-voltage and resistance-voltage measurements of 50 nm-TST-based and 10 nm-TST-based devices exhibit that 10 nm-TST-based device can realize low voltage and low power operation, but owns relatively lower speed for its longer incubation time.

Original language	English
Pages (from-to)	13-16
Number of pages	4
Journal	Thin Solid Films
Volume	590
DOIs	https://doi.org/10.1016/j.tsf.2015.07.056
State	Published - 1 Sep 2015
Externally published	Yes

Keywords

Phase change memory
Thickness dependence
Ti0.43Sb2Te3

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10.1016/j.tsf.2015.07.056

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@article{e6e7c97b4ab942e4b17d8935116ccf3f,

title = "Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices",

abstract = "The crystallization behavior of ultrathin Ti0.43Sb2Te3 (TST) films dependent on thickness was studied. As the film thickness decreases, the crystallization temperature (Tc) firstly increases in the thickness range of 10-50 nm, and then decreases when the thickness is less than 10 nm. Two factors can explain the variation trend of Tc with decreasing thickness of TST films. The increment of Tc is mainly due to the crystallization suppression originating from the increment of surface-to-volume in 10-50 nm TST films, and the decrement is dominantly attributed to the crystallization promoter of substrate/film interface in sub-10 nm TST films. The current-voltage and resistance-voltage measurements of 50 nm-TST-based and 10 nm-TST-based devices exhibit that 10 nm-TST-based device can realize low voltage and low power operation, but owns relatively lower speed for its longer incubation time.",

keywords = "Phase change memory, Thickness dependence, Ti0.43Sb2Te3",

author = "Le Li and Sannian Song and Zhonghua Zhang and Yueqing Zhu and Zhitang Song and Yan Cheng and Shilong Lv and Bo Liu and Liangliang Chen",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2015.07.056",

language = "英语",

volume = "590",

pages = "13--16",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices

AU - Li, Le

AU - Song, Sannian

AU - Zhang, Zhonghua

AU - Zhu, Yueqing

AU - Song, Zhitang

AU - Cheng, Yan

AU - Lv, Shilong

AU - Liu, Bo

AU - Chen, Liangliang

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The crystallization behavior of ultrathin Ti0.43Sb2Te3 (TST) films dependent on thickness was studied. As the film thickness decreases, the crystallization temperature (Tc) firstly increases in the thickness range of 10-50 nm, and then decreases when the thickness is less than 10 nm. Two factors can explain the variation trend of Tc with decreasing thickness of TST films. The increment of Tc is mainly due to the crystallization suppression originating from the increment of surface-to-volume in 10-50 nm TST films, and the decrement is dominantly attributed to the crystallization promoter of substrate/film interface in sub-10 nm TST films. The current-voltage and resistance-voltage measurements of 50 nm-TST-based and 10 nm-TST-based devices exhibit that 10 nm-TST-based device can realize low voltage and low power operation, but owns relatively lower speed for its longer incubation time.

AB - The crystallization behavior of ultrathin Ti0.43Sb2Te3 (TST) films dependent on thickness was studied. As the film thickness decreases, the crystallization temperature (Tc) firstly increases in the thickness range of 10-50 nm, and then decreases when the thickness is less than 10 nm. Two factors can explain the variation trend of Tc with decreasing thickness of TST films. The increment of Tc is mainly due to the crystallization suppression originating from the increment of surface-to-volume in 10-50 nm TST films, and the decrement is dominantly attributed to the crystallization promoter of substrate/film interface in sub-10 nm TST films. The current-voltage and resistance-voltage measurements of 50 nm-TST-based and 10 nm-TST-based devices exhibit that 10 nm-TST-based device can realize low voltage and low power operation, but owns relatively lower speed for its longer incubation time.

KW - Phase change memory

KW - Thickness dependence

KW - Ti0.43Sb2Te3

UR - https://www.scopus.com/pages/publications/84941357069

U2 - 10.1016/j.tsf.2015.07.056

DO - 10.1016/j.tsf.2015.07.056

M3 - 文章

AN - SCOPUS:84941357069

SN - 0040-6090

VL - 590

SP - 13

EP - 16

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Thickness dependent nano-crystallization in Ti_0.43Sb₂Te₃ films and its effect on devices

Abstract

Keywords

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