Thickness and mosaic morphology of InAs films grown by LPE supercooling technique

InAs films with different thicknesses were fabricated on (100)-oriented InAs substrate by liquid phase epitaxy supercooling technique using the sliding graphite boat. The X-ray diffraction measurement shows that films exhibit (100)-preferred crystal orientation. The film thickness dependence on the growth time and cooling rate was investigated by scanning electron microscope and the growth kinetics was analyzed based on one-dimensional diffusion theory. The experimental data were fitted very well by the supercooling equation, and the fitted diffusion coefficient at 520 °C was 6.2 9 10 ^-5 cm ²/s. The newly observed mosaic morphology was probably caused by the shake of the growth solution due to sliding the graphite boat.