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Thermally Induced Voids and Delamination in Cu RDL: Experimental and Simulation Study

  • Peng Xu
  • , Lan Li
  • , Yu Yao
  • , Weikai Shi
  • , Jiang Xia
  • , Zongyi Li
  • , Zuoyuan Dong*
  • , Xing Wu
  • *Corresponding author for this work
  • East China Normal University
  • Ltd.
  • Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work addresses the thermal reliability of multilayer copper (Cu) redistribution layers (RDLs). Scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) analyses were employed to investigate the morphology and elemental distribution of Cu interconnects and polyimide (PI) layers, as well as to observe void formation and interfacial delamination under multi-stage thermal loading. Stress simulation of the RDL structure reveals significantly higher stress in Cu regions than in PI, closely linked to void nucleation and interfacial failure. The findings highlight thermal stress mismatch and local stress concentration as key drivers of degradation, providing valuable insights for assessing the reliability of high-density RDL and optimizing integrated circuit (IC) packaging.

Original languageEnglish
Title of host publication2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026
EditorsCor Claeys, Bin Yu, Beichao Zhang, Peng Bai, Qianqian Huang, Xiaowei Li, Steve X. Liang, Hsiang-Lan Lung, Linyong Pang, Xinping Qu, Xiaoping Shi, Jianshi Tang, Pingqiang Zhou, Cheng Zhuo
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331592745
DOIs
StatePublished - 2026
Event2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026 - Shanghai, China
Duration: 22 Mar 2026 → 24 Mar 2026

Publication series

Name2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026

Conference

Conference2026 Conference of Science and Technology of Integrated Circuits, CSTIC 2026
Country/TerritoryChina
CityShanghai
Period22/03/26 → 24/03/26

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