@inproceedings{5de2ddf1c7c542079c0129a8c6af7be8,
title = "Thermal reliability study of graphene-based planar RRAM",
abstract = "Graphene with excellent electrical properties has a wide range of applications in electronic devices. Graphene-based planar resistance random access memory (RRAM) has received much attention due to its simple preparation methods and unique working mechanisms. However, the thermal reliability of graphene-based planar RRAM has rarely been reported. Here, we explore the reliability of the graphene-based RRAM at different temperatures, especially at high temperatures. The result shows that graphene-based planar RRAM could work in the temperature range from 100 K to 570 K.",
keywords = "graphene, resistance random access memory, thermal reliability, two-dimensional material",
author = "Yin Xia and Chen Luo and Xin Yang and Chaolun Wang and Wenzhong Bao and Xing Wu",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 ; Conference date: 20-07-2020 Through 23-07-2020",
year = "2020",
month = jul,
day = "20",
doi = "10.1109/IPFA49335.2020.9261033",
language = "英语",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020",
address = "美国",
}