Thermal-Mechanical and Signal Reliability of a New Differentiated TSV

Ziyu Liu; Han Jiang; Zhiyuan Zhu; Lin Chen; Qingqing Sun; Yabin Sun; David Wei Zhang

doi:10.1109/TED.2022.3199332

Thermal-Mechanical and Signal Reliability of a New Differentiated TSV

Ziyu Liu^*
, Han Jiang
, Zhiyuan Zhu
, Lin Chen
, Qingqing Sun
, Yabin Sun^*
, David Wei Zhang

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The thermal-mechanical and signal reliability of through-silicon via (TSV) occupies an important position in three-dimensional integrated circuits (3D-ICs). However, few studies combined the thermal-mechanical and signal reliability are found. In the work, a new differentiated structure of TSV is proposed to decrease the peak thermal stress without affecting signal integrity. The effect of TSV diameter on the peak thermal stress and its location is deeply investigated to decrease the stress. Compared with regular TSV, the differentiated TSV can reduce 22% peak thermal stress and 68% occupied silicon area. More differentiated TSVs can be placed in the same Si substrate by considering the influence of thermal stress between TSVs. Meanwhile, the differentiated TSV can better shield crosstalk noise with ensuring signal integrity.

Original language	English
Pages (from-to)	5766-5772
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	10
DOIs	https://doi.org/10.1109/TED.2022.3199332
State	Published - 1 Oct 2022

Keywords

3D-IC
differentiated TSV
peak thermal stress
signal integrity
thermal-mechanical and signal reliability

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10.1109/TED.2022.3199332

Cite this

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title = "Thermal-Mechanical and Signal Reliability of a New Differentiated TSV",

abstract = "The thermal-mechanical and signal reliability of through-silicon via (TSV) occupies an important position in three-dimensional integrated circuits (3D-ICs). However, few studies combined the thermal-mechanical and signal reliability are found. In the work, a new differentiated structure of TSV is proposed to decrease the peak thermal stress without affecting signal integrity. The effect of TSV diameter on the peak thermal stress and its location is deeply investigated to decrease the stress. Compared with regular TSV, the differentiated TSV can reduce 22\% peak thermal stress and 68\% occupied silicon area. More differentiated TSVs can be placed in the same Si substrate by considering the influence of thermal stress between TSVs. Meanwhile, the differentiated TSV can better shield crosstalk noise with ensuring signal integrity.",

keywords = "3D-IC, differentiated TSV, peak thermal stress, signal integrity, thermal-mechanical and signal reliability",

author = "Ziyu Liu and Han Jiang and Zhiyuan Zhu and Lin Chen and Qingqing Sun and Yabin Sun and Zhang, \{David Wei\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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doi = "10.1109/TED.2022.3199332",

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T1 - Thermal-Mechanical and Signal Reliability of a New Differentiated TSV

AU - Liu, Ziyu

AU - Jiang, Han

AU - Zhu, Zhiyuan

AU - Chen, Lin

AU - Sun, Qingqing

AU - Sun, Yabin

AU - Zhang, David Wei

PY - 2022/10/1

Y1 - 2022/10/1

N2 - The thermal-mechanical and signal reliability of through-silicon via (TSV) occupies an important position in three-dimensional integrated circuits (3D-ICs). However, few studies combined the thermal-mechanical and signal reliability are found. In the work, a new differentiated structure of TSV is proposed to decrease the peak thermal stress without affecting signal integrity. The effect of TSV diameter on the peak thermal stress and its location is deeply investigated to decrease the stress. Compared with regular TSV, the differentiated TSV can reduce 22% peak thermal stress and 68% occupied silicon area. More differentiated TSVs can be placed in the same Si substrate by considering the influence of thermal stress between TSVs. Meanwhile, the differentiated TSV can better shield crosstalk noise with ensuring signal integrity.

AB - The thermal-mechanical and signal reliability of through-silicon via (TSV) occupies an important position in three-dimensional integrated circuits (3D-ICs). However, few studies combined the thermal-mechanical and signal reliability are found. In the work, a new differentiated structure of TSV is proposed to decrease the peak thermal stress without affecting signal integrity. The effect of TSV diameter on the peak thermal stress and its location is deeply investigated to decrease the stress. Compared with regular TSV, the differentiated TSV can reduce 22% peak thermal stress and 68% occupied silicon area. More differentiated TSVs can be placed in the same Si substrate by considering the influence of thermal stress between TSVs. Meanwhile, the differentiated TSV can better shield crosstalk noise with ensuring signal integrity.

KW - 3D-IC

KW - differentiated TSV

KW - peak thermal stress

KW - signal integrity

KW - thermal-mechanical and signal reliability

UR - https://www.scopus.com/pages/publications/85137584092

U2 - 10.1109/TED.2022.3199332

DO - 10.1109/TED.2022.3199332

M3 - 文章

AN - SCOPUS:85137584092

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EP - 5772

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Thermal-Mechanical and Signal Reliability of a New Differentiated TSV

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Keywords

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