Thermal formation of switching resistivity nanowires in hafnium dioxide

  • A. L. Danilyuk*
  • , D. B. Migas
  • , M. A. Danilyuk
  • , V. E. Borisenko
  • , X. Wu
  • , N. Raghavan
  • , K. L. Pey
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A model of thermal formation of variable resistivity conducting nanowires during dielectric breakdown of HfO2 in a meta/insulator/semiconductor structure is proposed. Local heating induced reversible and irreversible phase transitions along grain boundaries in the insulator are considered to be responsible for the change in the resistivity of the structure. The heat wave has been estimated to propagate in HfO2 with the speed of (0.5-2)×105 m/s.

Original languageEnglish
Title of host publicationProceedings of International Conference NANOMEETING 2011
Subtitle of host publicationPhysics, Chemistry and Applications of Nanostructures - Reviews and Short Notes
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages39-42
Number of pages4
ISBN (Print)9789814343893
DOIs
StatePublished - 2011
Externally publishedYes
EventInternational Conference on Physics, Chemistry and Applications of Nanostructures, NANOMEETING 2011 - Minsk, Belarus
Duration: 24 May 201127 May 2011

Publication series

NameProceedings of International Conference NANOMEETING 2011: Physics, Chemistry and Applications of Nanostructures - Reviews and Short Notes

Conference

ConferenceInternational Conference on Physics, Chemistry and Applications of Nanostructures, NANOMEETING 2011
Country/TerritoryBelarus
CityMinsk
Period24/05/1127/05/11

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