Abstract
The zero-field spin splitting and Zeeman splitting in the In0.53Ga0.47As/ In0.52Al0.48As quantum well (QW) were extracted by a Shubnikov-de Haas oscillations (SdH) beating pattern analysis under different tilt angles between QW plane and external magnetic field. It is found that the zero-field spin splitting Δ0 increases with increasing carrier concentration while the effective g-factor |g*| decreases. The further calculation indicated that the decrease of |g*| with concentration is ascribed to the nonparabolic effect of the band structure.
| Original language | English |
|---|---|
| Pages (from-to) | 134-138 |
| Number of pages | 5 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 33 |
| Issue number | 2 |
| DOIs | |
| State | Published - Apr 2014 |
| Externally published | Yes |
Keywords
- Effective g-factor
- InGaAs/InAlAs quantum well
- Zeeman splitting
- Zero-field spin splitting