The zero field spin splitting and Zeeman splitting in the In0.53Ga0.47As/ In0.52Al0.48As quantum well

  • Xin Zhi Liu
  • , Yong Gang Xu
  • , Guo Lin Yu*
  • , Tie Lin
  • , Shao Ling Guo
  • , Jun Hao Chu
  • , Yong Gang Zhang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The zero-field spin splitting and Zeeman splitting in the In0.53Ga0.47As/ In0.52Al0.48As quantum well (QW) were extracted by a Shubnikov-de Haas oscillations (SdH) beating pattern analysis under different tilt angles between QW plane and external magnetic field. It is found that the zero-field spin splitting Δ0 increases with increasing carrier concentration while the effective g-factor |g*| decreases. The further calculation indicated that the decrease of |g*| with concentration is ascribed to the nonparabolic effect of the band structure.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume33
Issue number2
DOIs
StatePublished - Apr 2014
Externally publishedYes

Keywords

  • Effective g-factor
  • InGaAs/InAlAs quantum well
  • Zeeman splitting
  • Zero-field spin splitting

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