The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors

Ya Bin Sun; Jun Fu; Jun Xu; Yu Dong Wang; Ji Yang; Wei Zhou; Wei Zhang; Jie Cui; Gao Qing Li; Zhi Hong Liu; Su Min Wei; Feng Wang; Feng Ping Guan; Peng Zhan Li; Tian Jue Zhang

doi:10.1080/10420150.2013.763805

The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors

Ya Bin Sun, Jun Fu, Jun Xu, Yu Dong Wang, Ji Yang, Wei Zhou, Wei Zhang, Jie Cui, Gao Qing Li, Zhi Hong Liu, Su Min Wei, Feng Wang, Feng Ping Guan, Peng Zhan Li, Tian Jue Zhang

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.

Original language	English
Pages (from-to)	253-263
Number of pages	11
Journal	Radiation Effects and Defects in Solids
Volume	168
Issue number	4
DOIs	https://doi.org/10.1080/10420150.2013.763805
State	Published - 1 Apr 2013
Externally published	Yes

Keywords

Base width modulation
Displacement damage
Gamma irradiation
Proton irradiation
Silicon-germanium heterojunction bipolar transistor

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10.1080/10420150.2013.763805

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Sun, Y. B., Fu, J., Xu, J., Wang, Y. D., Yang, J., Zhou, W., Zhang, W., Cui, J., Li, G. Q., Liu, Z. H., Wei, S. M., Wang, F., Guan, F. P., Li, P. Z., & Zhang, T. J. (2013). The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 168(4), 253-263. https://doi.org/10.1080/10420150.2013.763805

@article{288f5a88148d4f648daebbed02130219,

title = "The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors",

abstract = "The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.",

keywords = "Base width modulation, Displacement damage, Gamma irradiation, Proton irradiation, Silicon-germanium heterojunction bipolar transistor",

author = "Sun, \{Ya Bin\} and Jun Fu and Jun Xu and Wang, \{Yu Dong\} and Ji Yang and Wei Zhou and Wei Zhang and Jie Cui and Li, \{Gao Qing\} and Liu, \{Zhi Hong\} and Wei, \{Su Min\} and Feng Wang and Guan, \{Feng Ping\} and Li, \{Peng Zhan\} and Zhang, \{Tian Jue\}",

year = "2013",

month = apr,

day = "1",

doi = "10.1080/10420150.2013.763805",

language = "英语",

volume = "168",

pages = "253--263",

journal = "Radiation Effects and Defects in Solids",

issn = "1042-0150",

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Sun, YB, Fu, J, Xu, J, Wang, YD, Yang, J, Zhou, W, Zhang, W, Cui, J, Li, GQ, Liu, ZH, Wei, SM, Wang, F, Guan, FP, Li, PZ & Zhang, TJ 2013, 'The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors', Radiation Effects and Defects in Solids, vol. 168, no. 4, pp. 253-263. https://doi.org/10.1080/10420150.2013.763805

TY - JOUR

T1 - The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors

AU - Sun, Ya Bin

AU - Fu, Jun

AU - Xu, Jun

AU - Wang, Yu Dong

AU - Yang, Ji

AU - Zhou, Wei

AU - Zhang, Wei

AU - Cui, Jie

AU - Li, Gao Qing

AU - Liu, Zhi Hong

AU - Wei, Su Min

AU - Wang, Feng

AU - Guan, Feng Ping

AU - Li, Peng Zhan

AU - Zhang, Tian Jue

PY - 2013/4/1

Y1 - 2013/4/1

N2 - The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.

AB - The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.

KW - Base width modulation

KW - Displacement damage

KW - Gamma irradiation

KW - Proton irradiation

KW - Silicon-germanium heterojunction bipolar transistor

UR - https://www.scopus.com/pages/publications/84875837350

U2 - 10.1080/10420150.2013.763805

DO - 10.1080/10420150.2013.763805

M3 - 文章

AN - SCOPUS:84875837350

SN - 1042-0150

VL - 168

SP - 253

EP - 263

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

IS - 4

ER -

The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors

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