The study of optimal oxidation time and different temperatures for high quality VO                         2                          thin film based on the sputtering oxidation coupling method

Xiaofeng Xu; Xinfeng He; Gang Wang; Xiaolong Yuan; Xingxing Liu; Haiyan Huang; Sheng Yao; Huaizhong Xing; Xiaoshuang Chen; Junhao Chu

doi:10.1016/j.apsusc.2011.04.068

The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method

Xiaofeng Xu^*
, Xinfeng He
, Gang Wang
, Xiaolong Yuan
, Xingxing Liu
, Haiyan Huang
, Sheng Yao
, Huaizhong Xing
, Xiaoshuang Chen
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The high quality Vanadium dioxide (VO ₂ ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO ₂ thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.

Original language	English
Pages (from-to)	8824-8827
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	21
DOIs	https://doi.org/10.1016/j.apsusc.2011.04.068
State	Published - 15 Aug 2011
Externally published	Yes

Keywords

Optimal oxidation time
Sputtering oxidation coupling
Temperature
Vanadium dioxide

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10.1016/j.apsusc.2011.04.068

Cite this

Xu, X., He, X., Wang, G., Yuan, X., Liu, X., Huang, H., Yao, S., Xing, H., Chen, X., & Chu, J. (2011). The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method Applied Surface Science, 257(21), 8824-8827. https://doi.org/10.1016/j.apsusc.2011.04.068

@article{dae7e2aeae554fdf9a9fefbfee42b21d,

title = " The study of optimal oxidation time and different temperatures for high quality VO 2 thin film based on the sputtering oxidation coupling method ",

abstract = " The high quality Vanadium dioxide (VO 2 ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.",

keywords = "Optimal oxidation time, Sputtering oxidation coupling, Temperature, Vanadium dioxide",

author = "Xiaofeng Xu and Xinfeng He and Gang Wang and Xiaolong Yuan and Xingxing Liu and Haiyan Huang and Sheng Yao and Huaizhong Xing and Xiaoshuang Chen and Junhao Chu",

year = "2011",

month = aug,

day = "15",

doi = "10.1016/j.apsusc.2011.04.068",

language = "英语",

volume = "257",

pages = "8824--8827",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "21",

}

Xu, X, He, X, Wang, G, Yuan, X, Liu, X, Huang, H, Yao, S, Xing, H, Chen, X & Chu, J 2011, ' The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method ', Applied Surface Science, vol. 257, no. 21, pp. 8824-8827. https://doi.org/10.1016/j.apsusc.2011.04.068

The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method . / Xu, Xiaofeng; He, Xinfeng; Wang, Gang et al.
In: Applied Surface Science, Vol. 257, No. 21, 15.08.2011, p. 8824-8827.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The study of optimal oxidation time and different temperatures for high quality VO 2 thin film based on the sputtering oxidation coupling method

AU - Xu, Xiaofeng

AU - He, Xinfeng

AU - Wang, Gang

AU - Yuan, Xiaolong

AU - Liu, Xingxing

AU - Huang, Haiyan

AU - Yao, Sheng

AU - Xing, Huaizhong

AU - Chen, Xiaoshuang

AU - Chu, Junhao

PY - 2011/8/15

Y1 - 2011/8/15

N2 - The high quality Vanadium dioxide (VO 2 ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.

AB - The high quality Vanadium dioxide (VO 2 ) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703 K-783 K, in good agreement with the Wagner's high-temperature oxidation model.

KW - Optimal oxidation time

KW - Sputtering oxidation coupling

KW - Temperature

KW - Vanadium dioxide

UR - https://www.scopus.com/pages/publications/79960168121

U2 - 10.1016/j.apsusc.2011.04.068

DO - 10.1016/j.apsusc.2011.04.068

M3 - 文章

AN - SCOPUS:79960168121

SN - 0169-4332

VL - 257

SP - 8824

EP - 8827

JO - Applied Surface Science

JF - Applied Surface Science

IS - 21

ER -

Xu X, He X, Wang G, Yuan X, Liu X, Huang H et al. The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method Applied Surface Science. 2011 Aug 15;257(21):8824-8827. doi: 10.1016/j.apsusc.2011.04.068

The study of optimal oxidation time and different temperatures for high quality VO ₂ thin film based on the sputtering oxidation coupling method

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