The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

X. D. Zhang; X. J. Meng; J. L. Sun; G. S. Wang; T. Lin; J. H. Chu

doi:10.1117/12.607751

The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

X. D. Zhang, X. J. Meng, J. L. Sun, G. S. Wang, T. Lin, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electrically conductive LaNiO_3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La₂NiO₄ and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

Original language	English
Article number	52
Pages (from-to)	228-231
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.607751
State	Published - 2005
Externally published	Yes
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

4-point probe
LaNiO thin film
RF magnetron sputtering

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10.1117/12.607751

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Zhang, X. D., Meng, X. J., Sun, J. L., Wang, G. S., Lin, T., & Chu, J. H. (2005). The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures. Proceedings of SPIE - The International Society for Optical Engineering, 5774, 228-231. Article 52. https://doi.org/10.1117/12.607751

@article{045d772501904a65936eea0f382d6156,

title = "The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures",

abstract = "Electrically conductive LaNiO3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0\%, 20\%, 40\%, 60\% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.",

keywords = "4-point probe, LaNiO thin film, RF magnetron sputtering",

author = "Zhang, \{X. D.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Wang, \{G. S.\} and T. Lin and Chu, \{J. H.\}",

year = "2005",

doi = "10.1117/12.607751",

language = "英语",

volume = "5774",

pages = "228--231",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

}

Zhang, XD, Meng, XJ, Sun, JL, Wang, GS, Lin, T & Chu, JH 2005, 'The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5774, 52, pp. 228-231. https://doi.org/10.1117/12.607751

The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures. / Zhang, X. D.; Meng, X. J.; Sun, J. L. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5774, 52, 2005, p. 228-231.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - The studies of RT electrical resistivities of LaNiO3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

AU - Zhang, X. D.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Wang, G. S.

AU - Lin, T.

AU - Chu, J. H.

PY - 2005

Y1 - 2005

N2 - Electrically conductive LaNiO3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

AB - Electrically conductive LaNiO3-δ thin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

KW - 4-point probe

KW - LaNiO thin film

KW - RF magnetron sputtering

UR - https://www.scopus.com/pages/publications/25644460120

U2 - 10.1117/12.607751

DO - 10.1117/12.607751

M3 - 会议文章

AN - SCOPUS:25644460120

SN - 0277-786X

VL - 5774

SP - 228

EP - 231

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 52

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

The studies of RT electrical resistivities of LaNiO_3-δ thin films by R.F. magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

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Keywords

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