The studies of room temperature electrical resistivity of post-annealed LaNiO3-δ thin film on Si(100)/n by RF magnetron sputtering

X. D. Zhang; X. J. Meng; J. L. Sun; G. S. Wang; T. Lin; J. H. Chu

doi:10.1117/12.608173

The studies of room temperature electrical resistivity of post-annealed LaNiO_3-δ thin film on Si(100)/n by RF magnetron sputtering

X. D. Zhang^*
, X. J. Meng
, J. L. Sun
, G. S. Wang
, T. Lin
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Highly (100)-oriented LaNiO_3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200°C with 40% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ∼9 X 10^-4 m^Ωcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ∼3×10^-4 Ωcm at 700°C and yield crack at 800°C.

Original language	English
Article number	107
Pages (from-to)	458-461
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.608173
State	Published - 2005
Externally published	Yes
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

4-point probe
LaNiO thin film
Post-annealing
RTA
rf sputtering

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10.1117/12.608173

Cite this

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title = "The studies of room temperature electrical resistivity of post-annealed LaNiO3-δ thin film on Si(100)/n by RF magnetron sputtering",

abstract = "Highly (100)-oriented LaNiO3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200°C with 40\% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ∼9 X 10-4 mΩcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ∼3×10-4 Ωcm at 700°C and yield crack at 800°C.",

keywords = "4-point probe, LaNiO thin film, Post-annealing, RTA, rf sputtering",

author = "Zhang, \{X. D.\} and Meng, \{X. J.\} and Sun, \{J. L.\} and Wang, \{G. S.\} and T. Lin and Chu, \{J. H.\}",

year = "2005",

doi = "10.1117/12.608173",

language = "英语",

volume = "5774",

pages = "458--461",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

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T1 - The studies of room temperature electrical resistivity of post-annealed LaNiO3-δ thin film on Si(100)/n by RF magnetron sputtering

AU - Zhang, X. D.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Wang, G. S.

AU - Lin, T.

AU - Chu, J. H.

PY - 2005

Y1 - 2005

N2 - Highly (100)-oriented LaNiO3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200°C with 40% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ∼9 X 10-4 mΩcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ∼3×10-4 Ωcm at 700°C and yield crack at 800°C.

AB - Highly (100)-oriented LaNiO3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200°C with 40% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ∼9 X 10-4 mΩcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ∼3×10-4 Ωcm at 700°C and yield crack at 800°C.

KW - 4-point probe

KW - LaNiO thin film

KW - Post-annealing

KW - RTA

KW - rf sputtering

UR - https://www.scopus.com/pages/publications/25644433666

U2 - 10.1117/12.608173

DO - 10.1117/12.608173

M3 - 会议文章

AN - SCOPUS:25644433666

SN - 0277-786X

VL - 5774

SP - 458

EP - 461

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 107

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

The studies of room temperature electrical resistivity of post-annealed LaNiO_3-δ thin film on Si(100)/n by RF magnetron sputtering

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Keywords

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