The strain effect and the ferroelectric field effect in LaMnO _3+δ film/Pb(Mg_1/3Nb_2/3)O ₃-PbTiO₃ single-crystal heterostructures

The evolution of the competition and coaction between the ferroelectric field effect and the strain effect with temperature has been studied for the LaMnO_3+δ film/Pb(Mg_1/3Nb_2/3)O ₃-PbTiO₃ crystal heterostructure. The polarization- rotation-induced strain has a dramatic impact on the electronic transport properties at room temperature. Upon cooling, the polarization-rotation-induced interfacial charge effect competes with and finally overwhelms the strain effect, and modulates the transport and magnetic properties of the LaMnO _3+δ film reversibly via the depletion or accumulation of hole carriers at interface. The identification of charge carrier-mediated electric-field-control of the electronic transport and magnetic properties would help researchers better understand the magnetoelectric coupling mechanism in manganite film/ferroelectric crystal heterostructures.