The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu2MnSnS4 absorbers for photovoltaics

Jiejin Yu; Hongmei Deng; Qiao Zhang; Jiahua Tao; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2018.08.147

The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu₂MnSnS₄ absorbers for photovoltaics

Jiejin Yu
, Hongmei Deng
, Qiao Zhang
, Jiahua Tao
, Lin Sun
, Pingxiong Yang^*
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Shanghai University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In the present work, the effect mechanisms of the sulfurization temperature on the Cu₂MnSnS₄ (CMTS) absorbers and the photovoltaic characteristics of devices were studied systematically. The results indicate that an increase in sulfurization temperature form 500 °C to 560 °C significantly improves the crystallinity and morphology, lowers the band gap of the CMTS absorbers, and eventually enhances the photovoltaic performance. However, a further increase in the temperature to 590 °C degrades the crystallinity and morphology. By tuning sulfurization temperature, the short current density (J_sc) and power conversion efficiency (PCE) increase over fourfold. When the temperature optimized to 560 °C, the CMTS solar cell shows the highest PCE of 0.91% with J_sc = 7.71 mA·cm⁻², V_oc = 320 mV and FF = 37%.

Original language	English
Pages (from-to)	111-114
Number of pages	4
Journal	Materials Letters
Volume	233
DOIs	https://doi.org/10.1016/j.matlet.2018.08.147
State	Published - 15 Dec 2018

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CuMnSnS
Semiconductors
Solar cells
Sulfurization temperature
Thin films

Access to Document

10.1016/j.matlet.2018.08.147

Cite this

@article{ddf6497f22ce40f284fbb77a767e7442,

title = "The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu2MnSnS4 absorbers for photovoltaics",

abstract = "In the present work, the effect mechanisms of the sulfurization temperature on the Cu2MnSnS4 (CMTS) absorbers and the photovoltaic characteristics of devices were studied systematically. The results indicate that an increase in sulfurization temperature form 500 °C to 560 °C significantly improves the crystallinity and morphology, lowers the band gap of the CMTS absorbers, and eventually enhances the photovoltaic performance. However, a further increase in the temperature to 590 °C degrades the crystallinity and morphology. By tuning sulfurization temperature, the short current density (Jsc) and power conversion efficiency (PCE) increase over fourfold. When the temperature optimized to 560 °C, the CMTS solar cell shows the highest PCE of 0.91\% with Jsc = 7.71 mA·cm−2, Voc = 320 mV and FF = 37\%.",

keywords = "CuMnSnS, Semiconductors, Solar cells, Sulfurization temperature, Thin films",

author = "Jiejin Yu and Hongmei Deng and Qiao Zhang and Jiahua Tao and Lin Sun and Pingxiong Yang and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2018.08.147",

language = "英语",

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TY - JOUR

T1 - The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu2MnSnS4 absorbers for photovoltaics

AU - Yu, Jiejin

AU - Deng, Hongmei

AU - Zhang, Qiao

AU - Tao, Jiahua

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2018/12/15

Y1 - 2018/12/15

N2 - In the present work, the effect mechanisms of the sulfurization temperature on the Cu2MnSnS4 (CMTS) absorbers and the photovoltaic characteristics of devices were studied systematically. The results indicate that an increase in sulfurization temperature form 500 °C to 560 °C significantly improves the crystallinity and morphology, lowers the band gap of the CMTS absorbers, and eventually enhances the photovoltaic performance. However, a further increase in the temperature to 590 °C degrades the crystallinity and morphology. By tuning sulfurization temperature, the short current density (Jsc) and power conversion efficiency (PCE) increase over fourfold. When the temperature optimized to 560 °C, the CMTS solar cell shows the highest PCE of 0.91% with Jsc = 7.71 mA·cm−2, Voc = 320 mV and FF = 37%.

AB - In the present work, the effect mechanisms of the sulfurization temperature on the Cu2MnSnS4 (CMTS) absorbers and the photovoltaic characteristics of devices were studied systematically. The results indicate that an increase in sulfurization temperature form 500 °C to 560 °C significantly improves the crystallinity and morphology, lowers the band gap of the CMTS absorbers, and eventually enhances the photovoltaic performance. However, a further increase in the temperature to 590 °C degrades the crystallinity and morphology. By tuning sulfurization temperature, the short current density (Jsc) and power conversion efficiency (PCE) increase over fourfold. When the temperature optimized to 560 °C, the CMTS solar cell shows the highest PCE of 0.91% with Jsc = 7.71 mA·cm−2, Voc = 320 mV and FF = 37%.

KW - CuMnSnS

KW - Semiconductors

KW - Solar cells

KW - Sulfurization temperature

KW - Thin films

UR - https://www.scopus.com/pages/publications/85052623867

U2 - 10.1016/j.matlet.2018.08.147

DO - 10.1016/j.matlet.2018.08.147

M3 - 文章

AN - SCOPUS:85052623867

SN - 0167-577X

VL - 233

SP - 111

EP - 114

JO - Materials Letters

JF - Materials Letters

ER -