The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

Huai Xin Wei; Qing Dong Ou; Zheng Zhang; Jian Li; Yan Qing Li; Shuit Tong Lee; Jian Xin Tang

doi:10.1016/j.orgel.2013.01.007

The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

Huai Xin Wei, Qing Dong Ou, Zheng Zhang, Jian Li, Yan Qing Li, Shuit Tong Lee, Jian Xin Tang

Soochow University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq ₃) for organic light-emitting diodes. The electronic structures of CsF-doped Alq₃ layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq₃ layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.

Original language	English
Pages (from-to)	839-844
Number of pages	6
Journal	Organic Electronics
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2013.01.007
State	Published - Mar 2013
Externally published	Yes

Keywords

CsF
Electron transport layer
Electronic structure
OLED
n-Type doping

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10.1016/j.orgel.2013.01.007

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title = "The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes",

abstract = "We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq 3) for organic light-emitting diodes. The electronic structures of CsF-doped Alq3 layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq3 layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.",

keywords = "CsF, Electron transport layer, Electronic structure, OLED, n-Type doping",

author = "Wei, \{Huai Xin\} and Ou, \{Qing Dong\} and Zheng Zhang and Jian Li and Li, \{Yan Qing\} and Lee, \{Shuit Tong\} and Tang, \{Jian Xin\}",

year = "2013",

month = mar,

doi = "10.1016/j.orgel.2013.01.007",

language = "英语",

volume = "14",

pages = "839--844",

journal = "Organic Electronics",

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TY - JOUR

T1 - The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

AU - Wei, Huai Xin

AU - Ou, Qing Dong

AU - Zhang, Zheng

AU - Li, Jian

AU - Li, Yan Qing

AU - Lee, Shuit Tong

AU - Tang, Jian Xin

PY - 2013/3

Y1 - 2013/3

N2 - We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq 3) for organic light-emitting diodes. The electronic structures of CsF-doped Alq3 layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq3 layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.

AB - We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq 3) for organic light-emitting diodes. The electronic structures of CsF-doped Alq3 layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq3 layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.

KW - CsF

KW - Electron transport layer

KW - Electronic structure

KW - OLED

KW - n-Type doping

UR - https://www.scopus.com/pages/publications/84873453723

U2 - 10.1016/j.orgel.2013.01.007

DO - 10.1016/j.orgel.2013.01.007

M3 - 文章

AN - SCOPUS:84873453723

SN - 1566-1199

VL - 14

SP - 839

EP - 844

JO - Organic Electronics

JF - Organic Electronics

IS - 3

ER -

The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

Abstract

Keywords

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