@inproceedings{5a7c4d36e8b04a8abdbeec4daf70f983,
title = "The reliability of SiGe HBT under swift heavy ion irradiation",
abstract = "Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were irradiated by 25Mev Si4+ ion with equivalent absorbed dose from 300 krad(Si) to 10 Mrad(Si). Pre- and post-irradiation direct current (DC) characteristics were used to quantify the dose tolerance to the heavy ion irradiation. Base current was found more sensitive than collector current and current gain appeared to decline with the ion fluence increasing. An unexpected increase in emitter current was observed in the reversed-mode operation. The reverse leakage current of base-collector and base-emitter junction increased with the increase in ion fluence. The displacement damages were thought to be mainly contributed to performance degradation of SiGe HBT.",
keywords = "Displacement damage, SiGe HBT, swift heavy ion",
author = "Yabin Sun and Jun Fu and Jun Xu and Yudong Wang and Wei Zhou and Wei Zhang and Jie Cui and Gaoqing Li and Zhihong Liu",
year = "2013",
doi = "10.1109/EDSSC.2013.6628148",
language = "英语",
isbn = "9781467325233",
series = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
booktitle = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",
note = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 ; Conference date: 03-06-2013 Through 05-06-2013",
}