The relationship between resistivity and temperature for Hg 1-xCdxTe photoconductive detectors

Yongsheng Gui; G. Z. Zheng; X. C. Zhang; S. L. Guo; J. H. Chu; Yi Cai

doi:10.1117/12.300710

The relationship between resistivity and temperature for Hg _1-xCd_xTe photoconductive detectors

Yongsheng Gui^*
, G. Z. Zheng
, X. C. Zhang
, S. L. Guo
, J. H. Chu
, Yi Cai

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Two kinds of two dimensional electrons in same surface have been found in Hg_1-xCd_xTe (x=0.214) photoconductive detectors from studies of the shubnikov-de Haas (SdH) oscillation. It has been found that the number of electrons in each kind is about constant from 1.5K to 55K by SdH measurements. A model considered two kinds of surface electrons is proposed to fit the temperature dependence of the resistivity. The electrical parameters obtained by this model agree well with the experiment and the results given by SdH measurements. This paper offers a simple and effective model to investigate the bulk and surface electrical properties for a two-terminal device.

Original language	English
Pages (from-to)	391-394
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3175
DOIs	https://doi.org/10.1117/12.300710
State	Published - 1998
Externally published	Yes
Event	3rd International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 15 Apr 1997 → 15 Apr 1997

Keywords

Accumulated layer
HgCdTe photoconductive detector
Resistivity

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10.1117/12.300710

Cite this

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title = "The relationship between resistivity and temperature for Hg 1-xCdxTe photoconductive detectors",

abstract = "Two kinds of two dimensional electrons in same surface have been found in Hg1-xCdxTe (x=0.214) photoconductive detectors from studies of the shubnikov-de Haas (SdH) oscillation. It has been found that the number of electrons in each kind is about constant from 1.5K to 55K by SdH measurements. A model considered two kinds of surface electrons is proposed to fit the temperature dependence of the resistivity. The electrical parameters obtained by this model agree well with the experiment and the results given by SdH measurements. This paper offers a simple and effective model to investigate the bulk and surface electrical properties for a two-terminal device.",

keywords = "Accumulated layer, HgCdTe photoconductive detector, Resistivity",

author = "Yongsheng Gui and Zheng, \{G. Z.\} and Zhang, \{X. C.\} and Guo, \{S. L.\} and Chu, \{J. H.\} and Yi Cai",

year = "1998",

doi = "10.1117/12.300710",

language = "英语",

volume = "3175",

pages = "391--394",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

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note = "3rd International Conference on Thin Film Physics and Applications ; Conference date: 15-04-1997 Through 15-04-1997",

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TY - JOUR

T1 - The relationship between resistivity and temperature for Hg 1-xCdxTe photoconductive detectors

AU - Gui, Yongsheng

AU - Zheng, G. Z.

AU - Zhang, X. C.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Cai, Yi

PY - 1998

Y1 - 1998

N2 - Two kinds of two dimensional electrons in same surface have been found in Hg1-xCdxTe (x=0.214) photoconductive detectors from studies of the shubnikov-de Haas (SdH) oscillation. It has been found that the number of electrons in each kind is about constant from 1.5K to 55K by SdH measurements. A model considered two kinds of surface electrons is proposed to fit the temperature dependence of the resistivity. The electrical parameters obtained by this model agree well with the experiment and the results given by SdH measurements. This paper offers a simple and effective model to investigate the bulk and surface electrical properties for a two-terminal device.

AB - Two kinds of two dimensional electrons in same surface have been found in Hg1-xCdxTe (x=0.214) photoconductive detectors from studies of the shubnikov-de Haas (SdH) oscillation. It has been found that the number of electrons in each kind is about constant from 1.5K to 55K by SdH measurements. A model considered two kinds of surface electrons is proposed to fit the temperature dependence of the resistivity. The electrical parameters obtained by this model agree well with the experiment and the results given by SdH measurements. This paper offers a simple and effective model to investigate the bulk and surface electrical properties for a two-terminal device.

KW - Accumulated layer

KW - HgCdTe photoconductive detector

KW - Resistivity

UR - https://www.scopus.com/pages/publications/57649098603

U2 - 10.1117/12.300710

DO - 10.1117/12.300710

M3 - 会议文章

AN - SCOPUS:57649098603

SN - 0277-786X

VL - 3175

SP - 391

EP - 394

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 3rd International Conference on Thin Film Physics and Applications

Y2 - 15 April 1997 through 15 April 1997

ER -

The relationship between resistivity and temperature for Hg _1-xCd_xTe photoconductive detectors

Abstract

Keywords

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