The origin of additional modes in Raman spectra of N+-implanted ZnO

Jianguo Yu, Huaizhong Xing, Qiang Zhao, Huibing Mao, Ye Shen, Jiqing Wang, Zongsheng Lai, Ziqiang Zhu

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.

Original languageEnglish
Pages (from-to)502-504
Number of pages3
JournalSolid State Communications
Volume138
Issue number10-11
DOIs
StatePublished - Jun 2006

Keywords

  • A. ZnO
  • C. Raman scattering
  • D. Ion implantation
  • D. Local vibrational mode

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