Abstract
Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.
| Original language | English |
|---|---|
| Pages (from-to) | 502-504 |
| Number of pages | 3 |
| Journal | Solid State Communications |
| Volume | 138 |
| Issue number | 10-11 |
| DOIs | |
| State | Published - Jun 2006 |
Keywords
- A. ZnO
- C. Raman scattering
- D. Ion implantation
- D. Local vibrational mode