The origin of additional modes in Raman spectra of N+-implanted ZnO

Jianguo Yu; Huaizhong Xing; Qiang Zhao; Huibing Mao; Ye Shen; Jiqing Wang; Zongsheng Lai; Ziqiang Zhu

doi:10.1016/j.ssc.2006.04.019

The origin of additional modes in Raman spectra of N⁺-implanted ZnO

Jianguo Yu
, Huaizhong Xing
, Qiang Zhao
, Huibing Mao
, Ye Shen
, Jiqing Wang^*
, Zongsheng Lai
, Ziqiang Zhu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Donghua University
CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Raman measurements were performed on ZnO single crystals before and after implantation with N⁺, O⁺, Si⁺, and Ga⁺ ions. It is found that the broad Raman band at 576 cm^-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm^-1 are observed only in Raman spectrum of N⁺-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm^-1 peak. We assign the additional modes to N⁺-related local vibrational modes.

Original language	English
Pages (from-to)	502-504
Number of pages	3
Journal	Solid State Communications
Volume	138
Issue number	10-11
DOIs	https://doi.org/10.1016/j.ssc.2006.04.019
State	Published - Jun 2006

Keywords

A. ZnO
C. Raman scattering
D. Ion implantation
D. Local vibrational mode

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10.1016/j.ssc.2006.04.019

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title = "The origin of additional modes in Raman spectra of N+-implanted ZnO",

abstract = "Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.",

keywords = "A. ZnO, C. Raman scattering, D. Ion implantation, D. Local vibrational mode",

author = "Jianguo Yu and Huaizhong Xing and Qiang Zhao and Huibing Mao and Ye Shen and Jiqing Wang and Zongsheng Lai and Ziqiang Zhu",

year = "2006",

month = jun,

doi = "10.1016/j.ssc.2006.04.019",

language = "英语",

volume = "138",

pages = "502--504",

journal = "Solid State Communications",

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TY - JOUR

T1 - The origin of additional modes in Raman spectra of N+-implanted ZnO

AU - Yu, Jianguo

AU - Xing, Huaizhong

AU - Zhao, Qiang

AU - Mao, Huibing

AU - Shen, Ye

AU - Wang, Jiqing

AU - Lai, Zongsheng

AU - Zhu, Ziqiang

PY - 2006/6

Y1 - 2006/6

N2 - Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.

AB - Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm-1 appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorder-activated Raman scattering. Two extra peaks at 275 and 510 cm-1 are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm-1 peak. We assign the additional modes to N+-related local vibrational modes.

KW - A. ZnO

KW - C. Raman scattering

KW - D. Ion implantation

KW - D. Local vibrational mode

UR - https://www.scopus.com/pages/publications/33744515490

U2 - 10.1016/j.ssc.2006.04.019

DO - 10.1016/j.ssc.2006.04.019

M3 - 文章

AN - SCOPUS:33744515490

SN - 0038-1098

VL - 138

SP - 502

EP - 504

JO - Solid State Communications

JF - Solid State Communications

IS - 10-11

ER -

The origin of additional modes in Raman spectra of N⁺-implanted ZnO

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Keywords

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