The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis

  • X. Z. Liu
  • , G. Yu*
  • , L. M. Wei
  • , T. Lin
  • , Y. G. Xu
  • , J. R. Yang
  • , Y. F. Wei
  • , S. L. Guo
  • , J. H. Chu
  • , N. L. Rowell
  • , D. J. Lockwood
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd 0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (∼3.0-6.0 × 1015 m-2), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system.

Original languageEnglish
Article number013704
JournalJournal of Applied Physics
Volume113
Issue number1
DOIs
StatePublished - 7 Jan 2013

Fingerprint

Dive into the research topics of 'The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis'. Together they form a unique fingerprint.

Cite this