The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Xionghu Xu; Ming Li; Shubing Li; Anyang Cui; Menghan Deng; Kai Jiang; Liangqing Zhu; Liyan Shang; Junhao Chu; Zhigao Hu

doi:10.1109/LED.2023.3237230

The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Xionghu Xu
, Ming Li
, Shubing Li
, Anyang Cui
, Menghan Deng
, Kai Jiang
, Liangqing Zhu^*
, Liyan Shang
, Junhao Chu
, Zhigao Hu^*

^*Corresponding author for this work

East China Normal University
Shanxi University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

Original language	English
Pages (from-to)	488-491
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/LED.2023.3237230
State	Published - 1 Mar 2023
Externally published	Yes

Keywords

C-AFM
GST films
Joule heat
crystallinity
phase-change

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10.1109/LED.2023.3237230

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title = "The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy",

abstract = "We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 \% and less electrical damage with a volume expansion rate of 19.1±6.5\%.",

keywords = "C-AFM, GST films, Joule heat, crystallinity, phase-change",

author = "Xionghu Xu and Ming Li and Shubing Li and Anyang Cui and Menghan Deng and Kai Jiang and Liangqing Zhu and Liyan Shang and Junhao Chu and Zhigao Hu",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

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doi = "10.1109/LED.2023.3237230",

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TY - JOUR

T1 - The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

AU - Xu, Xionghu

AU - Li, Ming

AU - Li, Shubing

AU - Cui, Anyang

AU - Deng, Menghan

AU - Jiang, Kai

AU - Zhu, Liangqing

AU - Shang, Liyan

AU - Chu, Junhao

AU - Hu, Zhigao

PY - 2023/3/1

Y1 - 2023/3/1

N2 - We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

AB - We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

KW - C-AFM

KW - GST films

KW - Joule heat

KW - crystallinity

KW - phase-change

UR - https://www.scopus.com/pages/publications/85147263346

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DO - 10.1109/LED.2023.3237230

M3 - 文章

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SN - 0741-3106

VL - 44

SP - 488

EP - 491

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

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Keywords

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