The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Xionghu Xu; Ming Li; Shubing Li; Anyang Cui; Menghan Deng; Kai Jiang; Liangqing Zhu; Liyan Shang; Junhao Chu; Zhigao Hu

doi:10.1109/LED.2023.3237230

The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Xionghu Xu, Ming Li, Shubing Li, Anyang Cui, Menghan Deng, Kai Jiang, Liangqing Zhu, Liyan Shang, Junhao Chu, Zhigao Hu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

Original language	English
Pages (from-to)	488-491
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/LED.2023.3237230
State	Published - 1 Mar 2023

Keywords

C-AFM
GST films
Joule heat
crystallinity
phase-change

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10.1109/LED.2023.3237230

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title = "The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy",

abstract = "We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 \% and less electrical damage with a volume expansion rate of 19.1±6.5\%.",

keywords = "C-AFM, GST films, Joule heat, crystallinity, phase-change",

author = "Xionghu Xu and Ming Li and Shubing Li and Anyang Cui and Menghan Deng and Kai Jiang and Liangqing Zhu and Liyan Shang and Junhao Chu and Zhigao Hu",

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doi = "10.1109/LED.2023.3237230",

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T1 - The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

AU - Xu, Xionghu

AU - Li, Ming

AU - Li, Shubing

AU - Cui, Anyang

AU - Deng, Menghan

AU - Jiang, Kai

AU - Zhu, Liangqing

AU - Shang, Liyan

AU - Chu, Junhao

AU - Hu, Zhigao

PY - 2023/3/1

Y1 - 2023/3/1

N2 - We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

AB - We study the nanoscale electrical damage of Ge2Sb2Te5 (GST) phase-change films during crystallization by conductive atomic force microscopy (C-AFM) and Raman spectra. Amorphous GST ( a -GST) can be converted to crystalline GST ( c -GST) by applying an exciting direct current (DC) bias (8 V) between the tip and the GST surface. Furthermore, as film thickness increased, the electrical-induced region of GST films revealed a gradual increase in electrical damage and improved crystallinity. It shows that GST films with a thickness of 70 nm have a better crystallization ratio of 20.5 % and less electrical damage with a volume expansion rate of 19.1±6.5%.

KW - C-AFM

KW - GST films

KW - Joule heat

KW - crystallinity

KW - phase-change

UR - https://www.scopus.com/pages/publications/85147263346

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DO - 10.1109/LED.2023.3237230

M3 - 文章

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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The Nanoscale Electrical Damage Mechanism of GeSbTe Phase-Change Films Discovered by Conductive Atomic Force Microscopy

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Keywords

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