The leakage current in BiFeO3 films derived by chemical solution deposition

J. L. Sun; Y. W. Li; T. X. Li; T. Lin; J. Chen; X. J. Meng; J. H. Chu

doi:10.1080/00150190601021287

The leakage current in BiFeO₃ films derived by chemical solution deposition

J. L. Sun^*
, Y. W. Li
, T. X. Li
, T. Lin
, J. Chen
, X. J. Meng
, J. H. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependence of dc transport properties of BiFeO₃ films was studied. The transport behavior can be described by the Frenkel-Poole emission model even at very low voltage bias. The conductive tip AFM morphology and resistance mapping of the films revealed that current tends to transport along the grain boundaries at low voltage bias and transport across the grains at high voltage. Based on the above experimental results, a simple model was proposed to explain the enhanced Frenkel-Poole emission transport process at low voltage in thin films composed of different regions with high and low dielectric constants.

Original language	English
Pages (from-to)	83-89
Number of pages	7
Journal	Ferroelectrics
Volume	345
DOIs	https://doi.org/10.1080/00150190601021287
State	Published - 2006
Externally published	Yes

Keywords

BiFeO
Multiferroic thin film
Transport mechanism

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10.1080/00150190601021287

Cite this

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title = "The leakage current in BiFeO3 films derived by chemical solution deposition",

abstract = "The temperature dependence of dc transport properties of BiFeO3 films was studied. The transport behavior can be described by the Frenkel-Poole emission model even at very low voltage bias. The conductive tip AFM morphology and resistance mapping of the films revealed that current tends to transport along the grain boundaries at low voltage bias and transport across the grains at high voltage. Based on the above experimental results, a simple model was proposed to explain the enhanced Frenkel-Poole emission transport process at low voltage in thin films composed of different regions with high and low dielectric constants.",

keywords = "BiFeO, Multiferroic thin film, Transport mechanism",

author = "Sun, \{J. L.\} and Li, \{Y. W.\} and Li, \{T. X.\} and T. Lin and J. Chen and Meng, \{X. J.\} and Chu, \{J. H.\}",

year = "2006",

doi = "10.1080/00150190601021287",

language = "英语",

volume = "345",

pages = "83--89",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - The leakage current in BiFeO3 films derived by chemical solution deposition

AU - Sun, J. L.

AU - Li, Y. W.

AU - Li, T. X.

AU - Lin, T.

AU - Chen, J.

AU - Meng, X. J.

AU - Chu, J. H.

PY - 2006

Y1 - 2006

N2 - The temperature dependence of dc transport properties of BiFeO3 films was studied. The transport behavior can be described by the Frenkel-Poole emission model even at very low voltage bias. The conductive tip AFM morphology and resistance mapping of the films revealed that current tends to transport along the grain boundaries at low voltage bias and transport across the grains at high voltage. Based on the above experimental results, a simple model was proposed to explain the enhanced Frenkel-Poole emission transport process at low voltage in thin films composed of different regions with high and low dielectric constants.

AB - The temperature dependence of dc transport properties of BiFeO3 films was studied. The transport behavior can be described by the Frenkel-Poole emission model even at very low voltage bias. The conductive tip AFM morphology and resistance mapping of the films revealed that current tends to transport along the grain boundaries at low voltage bias and transport across the grains at high voltage. Based on the above experimental results, a simple model was proposed to explain the enhanced Frenkel-Poole emission transport process at low voltage in thin films composed of different regions with high and low dielectric constants.

KW - BiFeO

KW - Multiferroic thin film

KW - Transport mechanism

UR - https://www.scopus.com/pages/publications/33845622519

U2 - 10.1080/00150190601021287

DO - 10.1080/00150190601021287

M3 - 文章

AN - SCOPUS:33845622519

SN - 0015-0193

VL - 345

SP - 83

EP - 89

JO - Ferroelectrics

JF - Ferroelectrics

ER -

The leakage current in BiFeO₃ films derived by chemical solution deposition

Abstract

Keywords

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