The influence of sputtering power on phase-change films

  • Lei Zhang*
  • , Lixin Gu
  • , Xiaodong Han
  • , Huan Huang
  • , Yanan Dai
  • , Yan Cheng
  • , Yang Wang
  • , Ze Zhang
  • , Yiqun Wu
  • , Bo Liu
  • , Zhitang Song
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Sputter-deposited amorphous films of a phase-change material (Ge 2Sb 2Te 5) were prepared with various magnetron sputtering powers to determine its influence. Microscopic characteristics indicate that the sputtering power affects the film morphology: high sputtering powers lead to inhomogeneous domain-like patterns. The transition temperature from a metastable phase to a hexagonal phase decreased as the sputtering power increased. However, an analysis of the radial distribution functions indicates that the sputtering power did not have a distinct influence on the inner atomic structure of the amorphous phase. Therefore, a low sputtering power is beneficial to improve the quality of sputtered amorphous films.

Original languageEnglish
Pages (from-to)H205-H207
JournalElectrochemical and Solid-State Letters
Volume15
Issue number6
DOIs
StatePublished - 2012
Externally publishedYes

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