Abstract
Sputter-deposited amorphous films of a phase-change material (Ge 2Sb 2Te 5) were prepared with various magnetron sputtering powers to determine its influence. Microscopic characteristics indicate that the sputtering power affects the film morphology: high sputtering powers lead to inhomogeneous domain-like patterns. The transition temperature from a metastable phase to a hexagonal phase decreased as the sputtering power increased. However, an analysis of the radial distribution functions indicates that the sputtering power did not have a distinct influence on the inner atomic structure of the amorphous phase. Therefore, a low sputtering power is beneficial to improve the quality of sputtered amorphous films.
| Original language | English |
|---|---|
| Pages (from-to) | H205-H207 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 15 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2012 |
| Externally published | Yes |