The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se2 thin films

Hui Yi Cao; Hong Mei Deng; Jin Yu Cui; Xian Kuan Meng; Jun Zhang; Lin Sun; Ping Xiong Yang; Jun Hao Chu

doi:10.11972/j.issn.1001-9014.2015.06.017

The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se₂ thin films

Hui Yi Cao
, Hong Mei Deng
, Jin Yu Cui
, Xian Kuan Meng
, Jun Zhang
, Lin Sun
, Ping Xiong Yang^*
, Jun Hao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

Cu(In, Al)Se₂ (CIAS) thin films have been obtained by rapid thermal processing selenization of magnetron sputtering Cu-In-Al precursor thin films. The influence of selenization temperatures on the structural and optical properties of CIAS thin films has been investigated. The result reveals that the crystal structure of CIAS thin films depends on selenization temperature and the band gap energy has a red shift with the increase of selenization temperature. It is noted that the optimum selenization temperature of the CIAS thin films is 540℃, and it has a pure chalcopyrite structure with a band gap energy of 1.34 eV, which corresponding to the band gap energy of the theoretical maximum efficiency of solar cell absorber layer materials.

Original language	English
Pages (from-to)	726-730
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	34
Issue number	6
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2015.06.017
State	Published - 1 Dec 2015

Keywords

Cu(In, Al) Se
Selenizaiton temperature
Thin film

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10.11972/j.issn.1001-9014.2015.06.017

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title = "The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se2 thin films",

abstract = "Cu(In, Al)Se2 (CIAS) thin films have been obtained by rapid thermal processing selenization of magnetron sputtering Cu-In-Al precursor thin films. The influence of selenization temperatures on the structural and optical properties of CIAS thin films has been investigated. The result reveals that the crystal structure of CIAS thin films depends on selenization temperature and the band gap energy has a red shift with the increase of selenization temperature. It is noted that the optimum selenization temperature of the CIAS thin films is 540℃, and it has a pure chalcopyrite structure with a band gap energy of 1.34 eV, which corresponding to the band gap energy of the theoretical maximum efficiency of solar cell absorber layer materials.",

keywords = "Cu(In, Al) Se, Selenizaiton temperature, Thin film",

author = "Cao, \{Hui Yi\} and Deng, \{Hong Mei\} and Cui, \{Jin Yu\} and Meng, \{Xian Kuan\} and Jun Zhang and Lin Sun and Yang, \{Ping Xiong\} and Chu, \{Jun Hao\}",

year = "2015",

month = dec,

day = "1",

doi = "10.11972/j.issn.1001-9014.2015.06.017",

language = "英语",

volume = "34",

pages = "726--730",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "6",

}

TY - JOUR

T1 - The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se2 thin films

AU - Cao, Hui Yi

AU - Deng, Hong Mei

AU - Cui, Jin Yu

AU - Meng, Xian Kuan

AU - Zhang, Jun

AU - Sun, Lin

AU - Yang, Ping Xiong

AU - Chu, Jun Hao

PY - 2015/12/1

Y1 - 2015/12/1

N2 - Cu(In, Al)Se2 (CIAS) thin films have been obtained by rapid thermal processing selenization of magnetron sputtering Cu-In-Al precursor thin films. The influence of selenization temperatures on the structural and optical properties of CIAS thin films has been investigated. The result reveals that the crystal structure of CIAS thin films depends on selenization temperature and the band gap energy has a red shift with the increase of selenization temperature. It is noted that the optimum selenization temperature of the CIAS thin films is 540℃, and it has a pure chalcopyrite structure with a band gap energy of 1.34 eV, which corresponding to the band gap energy of the theoretical maximum efficiency of solar cell absorber layer materials.

AB - Cu(In, Al)Se2 (CIAS) thin films have been obtained by rapid thermal processing selenization of magnetron sputtering Cu-In-Al precursor thin films. The influence of selenization temperatures on the structural and optical properties of CIAS thin films has been investigated. The result reveals that the crystal structure of CIAS thin films depends on selenization temperature and the band gap energy has a red shift with the increase of selenization temperature. It is noted that the optimum selenization temperature of the CIAS thin films is 540℃, and it has a pure chalcopyrite structure with a band gap energy of 1.34 eV, which corresponding to the band gap energy of the theoretical maximum efficiency of solar cell absorber layer materials.

KW - Cu(In, Al) Se

KW - Selenizaiton temperature

KW - Thin film

UR - https://www.scopus.com/pages/publications/84955136216

U2 - 10.11972/j.issn.1001-9014.2015.06.017

DO - 10.11972/j.issn.1001-9014.2015.06.017

M3 - 文章

AN - SCOPUS:84955136216

SN - 1001-9014

VL - 34

SP - 726

EP - 730

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 6

ER -

The influence of selenization temperatures on the structural and optical properties of Cu (In, Al) Se₂ thin films

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Keywords

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