The influence of La content on photovoltaic effect of PZT thin films

Qian Sun; Hong Mei Deng; Ping Xiong Yang; Jun Hao Chu

doi:10.3724/SP.J.1010.2013.00128

The influence of La content on photovoltaic effect of PZT thin films

Qian Sun, Hong Mei Deng, Ping Xiong Yang, Jun Hao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The polycrystalline thin films of (Pb_1-xLa_x) (Zr_0.52Ti_0.48)_1-x/4O₃ (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600°C. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%. It reaches a maximum there and then decreases when the La content is increased furthermore.

Original language	English
Pages (from-to)	128-131
Number of pages	4
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	32
Issue number	2
DOIs	https://doi.org/10.3724/SP.J.1010.2013.00128
State	Published - Apr 2013

Keywords

PLZT thin films
Photovoltaic effect
Sol-gel process

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10.3724/SP.J.1010.2013.00128

Cite this

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title = "The influence of La content on photovoltaic effect of PZT thin films",

abstract = "The polycrystalline thin films of (Pb1-xLax) (Zr0.52Ti0.48)1-x/4O3 (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600°C. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1\% to 6\%. It reaches a maximum there and then decreases when the La content is increased furthermore.",

keywords = "PLZT thin films, Photovoltaic effect, Sol-gel process",

author = "Qian Sun and Deng, \{Hong Mei\} and Yang, \{Ping Xiong\} and Chu, \{Jun Hao\}",

year = "2013",

month = apr,

doi = "10.3724/SP.J.1010.2013.00128",

language = "英语",

volume = "32",

pages = "128--131",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

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TY - JOUR

T1 - The influence of La content on photovoltaic effect of PZT thin films

AU - Sun, Qian

AU - Deng, Hong Mei

AU - Yang, Ping Xiong

AU - Chu, Jun Hao

PY - 2013/4

Y1 - 2013/4

N2 - The polycrystalline thin films of (Pb1-xLax) (Zr0.52Ti0.48)1-x/4O3 (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600°C. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%. It reaches a maximum there and then decreases when the La content is increased furthermore.

AB - The polycrystalline thin films of (Pb1-xLax) (Zr0.52Ti0.48)1-x/4O3 (PLZT) were fabricated on LNO/Si substrates by sol-gel method. X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential (110) orientation can be obtained after a rapid thermal annealing process at 600°C. This is further confirmed by Raman spectrum. With the decrease of La content, hysteresis loops of the thin films gradually broaden. Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%. It reaches a maximum there and then decreases when the La content is increased furthermore.

KW - PLZT thin films

KW - Photovoltaic effect

KW - Sol-gel process

UR - https://www.scopus.com/pages/publications/84877676440

U2 - 10.3724/SP.J.1010.2013.00128

DO - 10.3724/SP.J.1010.2013.00128

M3 - 文章

AN - SCOPUS:84877676440

SN - 1001-9014

VL - 32

SP - 128

EP - 131

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 2

ER -

The influence of La content on photovoltaic effect of PZT thin films

Abstract

Keywords

UN SDGs

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