The influence of dead layers on the voltage response of ferroelectric film infrared detectors

T. Lin; J. L. Sun; X. J. Meng; J. H. Ma; F. W. Shi; J. Chen; J. H. Chu

doi:10.1080/10584580701320370

The influence of dead layers on the voltage response of ferroelectric film infrared detectors

T. Lin, J. L. Sun, X. J. Meng, J. H. Ma, F. W. Shi, J. Chen, J. H. Chu

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of the dead layers, which exist between the ferroelectric thin film and the electric electrodes, on the voltage response of the pyroelectric infrared detectors have been studied. By introducing an interface capacitor into the equivalent electric circuit of the device the optical voltage response of the detector were calculated. The results showed that the optical voltage response may decrease with the increase of thin film thickness. There is an optimum value of film thickness where the voltage reaches its maximum. This value spreads over a wide range for different device parameters.

Original language	English
Pages (from-to)	97-102
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	91
Issue number	1
DOIs	https://doi.org/10.1080/10584580701320370
State	Published - 2007
Externally published	Yes

Keywords

Ferroelectric film
Interface capacitor
Pyroelectric detector

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10.1080/10584580701320370

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abstract = "The effects of the dead layers, which exist between the ferroelectric thin film and the electric electrodes, on the voltage response of the pyroelectric infrared detectors have been studied. By introducing an interface capacitor into the equivalent electric circuit of the device the optical voltage response of the detector were calculated. The results showed that the optical voltage response may decrease with the increase of thin film thickness. There is an optimum value of film thickness where the voltage reaches its maximum. This value spreads over a wide range for different device parameters.",

keywords = "Ferroelectric film, Interface capacitor, Pyroelectric detector",

author = "T. Lin and Sun, \{J. L.\} and Meng, \{X. J.\} and Ma, \{J. H.\} and Shi, \{F. W.\} and J. Chen and Chu, \{J. H.\}",

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AU - Lin, T.

AU - Sun, J. L.

AU - Meng, X. J.

AU - Ma, J. H.

AU - Shi, F. W.

AU - Chen, J.

AU - Chu, J. H.

PY - 2007

Y1 - 2007

N2 - The effects of the dead layers, which exist between the ferroelectric thin film and the electric electrodes, on the voltage response of the pyroelectric infrared detectors have been studied. By introducing an interface capacitor into the equivalent electric circuit of the device the optical voltage response of the detector were calculated. The results showed that the optical voltage response may decrease with the increase of thin film thickness. There is an optimum value of film thickness where the voltage reaches its maximum. This value spreads over a wide range for different device parameters.

AB - The effects of the dead layers, which exist between the ferroelectric thin film and the electric electrodes, on the voltage response of the pyroelectric infrared detectors have been studied. By introducing an interface capacitor into the equivalent electric circuit of the device the optical voltage response of the detector were calculated. The results showed that the optical voltage response may decrease with the increase of thin film thickness. There is an optimum value of film thickness where the voltage reaches its maximum. This value spreads over a wide range for different device parameters.

KW - Ferroelectric film

KW - Interface capacitor

KW - Pyroelectric detector

UR - https://www.scopus.com/pages/publications/71149111271

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DO - 10.1080/10584580701320370

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The influence of dead layers on the voltage response of ferroelectric film infrared detectors

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Keywords

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