The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films

Ming Guo; Hongmei Deng; Pingxiong Yang; Junhao Chu

doi:10.1016/j.matlet.2009.04.004

The influence of annealing temperatures on the properties of Bi₂VO_5.5/LaNiO₃/Si thin films

Ming Guo, Hongmei Deng, Pingxiong Yang, Junhao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Bi₂VO_5.5 ferroelectric thin films were fabricated on LaNiO₃/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 °C were studied. The thin film annealed at 700 °C exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2P_r and coercive field E_c for the film annealed at 700 °C are 10.62 μC/cm² and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10^{- 8} A/cm² at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.

Original language	English
Pages (from-to)	1535-1537
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	17
DOIs	https://doi.org/10.1016/j.matlet.2009.04.004
State	Published - 15 Jul 2009

Keywords

BVO
Chemical solution deposition
Ferroelectric
Thin films

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10.1016/j.matlet.2009.04.004

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@article{4f06883a036941cc9b7f2955e2116d63,

title = "The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films",

abstract = "Bi2VO5.5 ferroelectric thin films were fabricated on LaNiO3/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 °C were studied. The thin film annealed at 700 °C exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2Pr and coercive field Ec for the film annealed at 700 °C are 10.62 μC/cm2 and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10- 8 A/cm2 at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.",

keywords = "BVO, Chemical solution deposition, Ferroelectric, Thin films",

author = "Ming Guo and Hongmei Deng and Pingxiong Yang and Junhao Chu",

year = "2009",

month = jul,

day = "15",

doi = "10.1016/j.matlet.2009.04.004",

language = "英语",

volume = "63",

pages = "1535--1537",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "17",

}

TY - JOUR

T1 - The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films

AU - Guo, Ming

AU - Deng, Hongmei

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2009/7/15

Y1 - 2009/7/15

N2 - Bi2VO5.5 ferroelectric thin films were fabricated on LaNiO3/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 °C were studied. The thin film annealed at 700 °C exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2Pr and coercive field Ec for the film annealed at 700 °C are 10.62 μC/cm2 and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10- 8 A/cm2 at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.

AB - Bi2VO5.5 ferroelectric thin films were fabricated on LaNiO3/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 °C were studied. The thin film annealed at 700 °C exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2Pr and coercive field Ec for the film annealed at 700 °C are 10.62 μC/cm2 and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10- 8 A/cm2 at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.

KW - BVO

KW - Chemical solution deposition

KW - Ferroelectric

KW - Thin films

UR - https://www.scopus.com/pages/publications/67349272053

U2 - 10.1016/j.matlet.2009.04.004

DO - 10.1016/j.matlet.2009.04.004

M3 - 文章

AN - SCOPUS:67349272053

SN - 0167-577X

VL - 63

SP - 1535

EP - 1537

JO - Materials Letters

JF - Materials Letters

IS - 17

ER -

The influence of annealing temperatures on the properties of Bi₂VO_5.5/LaNiO₃/Si thin films

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Keywords

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