The grain size effect of the Pb(Zr0.45Ti0.55)O 3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process

S. H. Hu; G. J. Hu; X. J. Meng; G. S. Wang; J. L. Sun; S. L. Guo; J. H. Chu; N. Dai

doi:10.1016/S0022-0248(03)01592-6

The grain size effect of the Pb(Zr_0.45Ti_0.55)O ₃ thin films deposited on LaNiO₃-coated silicon by modified sol-gel process

S. H. Hu^*, G. J. Hu, X. J. Meng, G. S. Wang, J. L. Sun, S. L. Guo, J. H. Chu, N. Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Highly (1 0 0) oriented PZT thin films with different grain sizes have been deposited on an LaNiO₃-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (1 0 0) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Journal of Crystal Growth
Volume	260
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(03)01592-6
State	Published - 2 Jan 2004
Externally published	Yes

Keywords

A1. X-ray diffraction
B1. Perovskites
B2. Ferroelectric materials

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10.1016/S0022-0248(03)01592-6

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title = "The grain size effect of the Pb(Zr0.45Ti0.55)O 3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process",

abstract = "Highly (1 0 0) oriented PZT thin films with different grain sizes have been deposited on an LaNiO3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (1 0 0) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization.",

keywords = "A1. X-ray diffraction, B1. Perovskites, B2. Ferroelectric materials",

author = "Hu, \{S. H.\} and Hu, \{G. J.\} and Meng, \{X. J.\} and Wang, \{G. S.\} and Sun, \{J. L.\} and Guo, \{S. L.\} and Chu, \{J. H.\} and N. Dai",

year = "2004",

month = jan,

day = "2",

doi = "10.1016/S0022-0248(03)01592-6",

language = "英语",

volume = "260",

pages = "109--114",

journal = "Journal of Crystal Growth",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - The grain size effect of the Pb(Zr0.45Ti0.55)O 3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process

AU - Hu, S. H.

AU - Hu, G. J.

AU - Meng, X. J.

AU - Wang, G. S.

AU - Sun, J. L.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Dai, N.

PY - 2004/1/2

Y1 - 2004/1/2

N2 - Highly (1 0 0) oriented PZT thin films with different grain sizes have been deposited on an LaNiO3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (1 0 0) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization.

AB - Highly (1 0 0) oriented PZT thin films with different grain sizes have been deposited on an LaNiO3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (1 0 0) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization.

KW - A1. X-ray diffraction

KW - B1. Perovskites

KW - B2. Ferroelectric materials

UR - https://www.scopus.com/pages/publications/0242691938

U2 - 10.1016/S0022-0248(03)01592-6

DO - 10.1016/S0022-0248(03)01592-6

M3 - 文章

AN - SCOPUS:0242691938

SN - 0022-0248

VL - 260

SP - 109

EP - 114

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

The grain size effect of the Pb(Zr_0.45Ti_0.55)O ₃ thin films deposited on LaNiO₃-coated silicon by modified sol-gel process

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Keywords

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