The Fluctuation Effect of Remnant Polarization in Hf.Zr.O Capacitors at Elevated Temperatures

Zhaomeng Gao; Yunzhe Zheng; Tianjiao Xin; Cheng Liu; Qiwendong Zhao; Yilin Xu; Yonghui Zheng; Xiaoling Lin; Hangbing Lyu; Yan Cheng

doi:10.1109/LED.2024.3443619

The Fluctuation Effect of Remnant Polarization in Hf.Zr.O Capacitors at Elevated Temperatures

Zhaomeng Gao
, Yunzhe Zheng
, Tianjiao Xin
, Cheng Liu
, Qiwendong Zhao
, Yilin Xu
, Yonghui Zheng
, Xiaoling Lin
, Hangbing Lyu
, Yan Cheng^*

^*Corresponding author for this work

East China Normal University
CAS - Shanghai Institute of Microsystem and Information Technology
Sci. and Technol. on Reliability Phys. and Application Technology of Electronic Component Laboratory
CAS - Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf0.5Zr0.5O2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.

Original language	English
Pages (from-to)	1788-1791
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/LED.2024.3443619
State	Published - 2024
Externally published	Yes

Keywords

Hafnia-based capacitors
Hf0.5Zr0.5O2 FE film
polarization fluctuation
temperature field.

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10.1109/LED.2024.3443619

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@article{367cfeaa8f6444f49605588fdecb101e,

title = "The Fluctuation Effect of Remnant Polarization in Hf.Zr.O Capacitors at Elevated Temperatures",

abstract = "Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf0.5Zr0.5O2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.",

keywords = "Hafnia-based capacitors, Hf0.5Zr0.5O2 FE film, polarization fluctuation, temperature field.",

author = "Zhaomeng Gao and Yunzhe Zheng and Tianjiao Xin and Cheng Liu and Qiwendong Zhao and Yilin Xu and Yonghui Zheng and Xiaoling Lin and Hangbing Lyu and Yan Cheng",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.",

year = "2024",

doi = "10.1109/LED.2024.3443619",

language = "英语",

volume = "45",

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TY - JOUR

T1 - The Fluctuation Effect of Remnant Polarization in Hf.Zr.O Capacitors at Elevated Temperatures

AU - Gao, Zhaomeng

AU - Zheng, Yunzhe

AU - Xin, Tianjiao

AU - Liu, Cheng

AU - Zhao, Qiwendong

AU - Xu, Yilin

AU - Zheng, Yonghui

AU - Lin, Xiaoling

AU - Lyu, Hangbing

AU - Cheng, Yan

PY - 2024

Y1 - 2024

N2 - Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf0.5Zr0.5O2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.

AB - Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based FE devices at varying temperatures is essential for enhancing the reliability of FE memory under real-working conditions. In this study, we investigated the remnant polarization (Pr) fluctuation during electrical cycling in Hf0.5Zr0.5O2 (HZO) capacitors at elevated temperatures. The decrease in Pr can be attributed to the formation and thickening of the tetragonal (T-) phase interface layer, which reduces the electric field applied to the orthorhombic (O-) phase layer. The subsequent increase in Pr is caused by oxygen defects and leakage current in the T-phase interface layer, raising the electric field applied to the O-FE layer. Therefore, fluctuations in the electric field applied to the O-FE layer are considered as the primary cause for Pr fluctuation. Our direct characterization of T-layers, defects, and electrical properties offers insights into assessing FE phase stability and oxygen defect evolution in fluorite-type FE materials, guiding strategies to enhance device reliability.

KW - Hafnia-based capacitors

KW - Hf0.5Zr0.5O2 FE film

KW - polarization fluctuation

KW - temperature field.

UR - https://www.scopus.com/pages/publications/85201301360

U2 - 10.1109/LED.2024.3443619

DO - 10.1109/LED.2024.3443619

M3 - 文章

AN - SCOPUS:85201301360

SN - 0741-3106

VL - 45

SP - 1788

EP - 1791

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

The Fluctuation Effect of Remnant Polarization in Hf.Zr.O Capacitors at Elevated Temperatures

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