The electrical parameter analysis for hg1-xcdxte photoconductors

Gui Yong-Sheng; Zheng Guo-Zhen; Guo Shao-Ling; Yi Cai; Jun Hao Chu; Tang Ding-Yuan

The electrical parameter analysis for hg_1-xcd_xte photoconductors

Gui Yong-Sheng, Zheng Guo-Zhen, Guo Shao-Ling, Yi Cai, Jun Hao Chu, Tang Ding-Yuan

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature and magnetic field dependent resistivity was measured for Hg_1-xCd_xTe photoconductive detectors. The density of all kinds of surface electrons was found to keep constant from 1. 2K to 55K by the Shubnikov-de Haas (SdH) measurements. A three-band model, which consists of two kinds of surface electrons and bulk electrons, was proposed to fit the temperature dependent resistivity. The electrical parameters obtained by this model agree well with the experimental data and the results given by SdH measurements.

Original language	English
Pages (from-to)	320-321
Number of pages	2
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	18
Issue number	4
State	Published - 1999
Externally published	Yes

Keywords

Hgcdte
Photoconductive detector
Shubnikov-de haas effect

Cite this

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title = "The electrical parameter analysis for hg1-xcdxte photoconductors",

abstract = "The temperature and magnetic field dependent resistivity was measured for Hg1-xCdxTe photoconductive detectors. The density of all kinds of surface electrons was found to keep constant from 1. 2K to 55K by the Shubnikov-de Haas (SdH) measurements. A three-band model, which consists of two kinds of surface electrons and bulk electrons, was proposed to fit the temperature dependent resistivity. The electrical parameters obtained by this model agree well with the experimental data and the results given by SdH measurements.",

keywords = "Hgcdte, Photoconductive detector, Shubnikov-de haas effect",

author = "Gui Yong-Sheng and Zheng Guo-Zhen and Guo Shao-Ling and Yi Cai and Chu, \{Jun Hao\} and Tang Ding-Yuan",

year = "1999",

language = "英语",

volume = "18",

pages = "320--321",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "4",

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TY - JOUR

T1 - The electrical parameter analysis for hg1-xcdxte photoconductors

AU - Yong-Sheng, Gui

AU - Guo-Zhen, Zheng

AU - Shao-Ling, Guo

AU - Cai, Yi

AU - Chu, Jun Hao

AU - Ding-Yuan, Tang

PY - 1999

Y1 - 1999

N2 - The temperature and magnetic field dependent resistivity was measured for Hg1-xCdxTe photoconductive detectors. The density of all kinds of surface electrons was found to keep constant from 1. 2K to 55K by the Shubnikov-de Haas (SdH) measurements. A three-band model, which consists of two kinds of surface electrons and bulk electrons, was proposed to fit the temperature dependent resistivity. The electrical parameters obtained by this model agree well with the experimental data and the results given by SdH measurements.

AB - The temperature and magnetic field dependent resistivity was measured for Hg1-xCdxTe photoconductive detectors. The density of all kinds of surface electrons was found to keep constant from 1. 2K to 55K by the Shubnikov-de Haas (SdH) measurements. A three-band model, which consists of two kinds of surface electrons and bulk electrons, was proposed to fit the temperature dependent resistivity. The electrical parameters obtained by this model agree well with the experimental data and the results given by SdH measurements.

KW - Hgcdte

KW - Photoconductive detector

KW - Shubnikov-de haas effect

UR - https://www.scopus.com/pages/publications/33746715523

M3 - 文章

AN - SCOPUS:33746715523

SN - 1001-9014

VL - 18

SP - 320

EP - 321

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 4

ER -

The electrical parameter analysis for hg_1-xcd_xte photoconductors

Abstract

Keywords

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