The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering

Y. Z. Li; X. D. Gao; C. Yang; F. Q. Huang

doi:10.1016/j.jallcom.2010.06.094

The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering

Y. Z. Li
, X. D. Gao
, C. Yang
, F. Q. Huang

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The p-type copper selenide thin films were deposited on glass substrate at room temperature by magnetron sputtering. The effects of sputtering power on crystallinity, surface morphology, optical and electrical properties of the copper selenide thin films were investigated. By adjusting the sputtering power, the thickness of as-deposited films varied between 225 nm and 375 nm. The crystallinity, the optical band-gap as well as the electrical conductivity of the as-deposited films were improved substantially. The copper selenide thin film deposited under optimal sputtering power possesses best crystallinity, widest optical band-gap of 2.40 eV and lowest electrical resistivity of 3.94 × 10^-4 Ω cm.

Original language	English
Pages (from-to)	623-627
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	505
Issue number	2
DOIs	https://doi.org/10.1016/j.jallcom.2010.06.094
State	Published - 3 Sep 2010
Externally published	Yes

Keywords

Copper selenide thin films
Electrical resistivity
Magnetron sputtering
Optical band-gap

Access to Document

10.1016/j.jallcom.2010.06.094

Cite this

@article{b93306be1f684123935722772ce7eeaa,

title = "The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering",

abstract = "The p-type copper selenide thin films were deposited on glass substrate at room temperature by magnetron sputtering. The effects of sputtering power on crystallinity, surface morphology, optical and electrical properties of the copper selenide thin films were investigated. By adjusting the sputtering power, the thickness of as-deposited films varied between 225 nm and 375 nm. The crystallinity, the optical band-gap as well as the electrical conductivity of the as-deposited films were improved substantially. The copper selenide thin film deposited under optimal sputtering power possesses best crystallinity, widest optical band-gap of 2.40 eV and lowest electrical resistivity of 3.94 × 10-4 Ω cm.",

keywords = "Copper selenide thin films, Electrical resistivity, Magnetron sputtering, Optical band-gap",

author = "Li, \{Y. Z.\} and Gao, \{X. D.\} and C. Yang and Huang, \{F. Q.\}",

year = "2010",

month = sep,

day = "3",

doi = "10.1016/j.jallcom.2010.06.094",

language = "英语",

volume = "505",

pages = "623--627",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering

AU - Li, Y. Z.

AU - Gao, X. D.

AU - Yang, C.

AU - Huang, F. Q.

PY - 2010/9/3

Y1 - 2010/9/3

N2 - The p-type copper selenide thin films were deposited on glass substrate at room temperature by magnetron sputtering. The effects of sputtering power on crystallinity, surface morphology, optical and electrical properties of the copper selenide thin films were investigated. By adjusting the sputtering power, the thickness of as-deposited films varied between 225 nm and 375 nm. The crystallinity, the optical band-gap as well as the electrical conductivity of the as-deposited films were improved substantially. The copper selenide thin film deposited under optimal sputtering power possesses best crystallinity, widest optical band-gap of 2.40 eV and lowest electrical resistivity of 3.94 × 10-4 Ω cm.

AB - The p-type copper selenide thin films were deposited on glass substrate at room temperature by magnetron sputtering. The effects of sputtering power on crystallinity, surface morphology, optical and electrical properties of the copper selenide thin films were investigated. By adjusting the sputtering power, the thickness of as-deposited films varied between 225 nm and 375 nm. The crystallinity, the optical band-gap as well as the electrical conductivity of the as-deposited films were improved substantially. The copper selenide thin film deposited under optimal sputtering power possesses best crystallinity, widest optical band-gap of 2.40 eV and lowest electrical resistivity of 3.94 × 10-4 Ω cm.

KW - Copper selenide thin films

KW - Electrical resistivity

KW - Magnetron sputtering

KW - Optical band-gap

UR - https://www.scopus.com/pages/publications/77955917557

U2 - 10.1016/j.jallcom.2010.06.094

DO - 10.1016/j.jallcom.2010.06.094

M3 - 文章

AN - SCOPUS:77955917557

SN - 0925-8388

VL - 505

SP - 623

EP - 627

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 2

ER -

The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this