The effect of titanium doping on the structure and phase change characteristics of Sb4Te

Min Zhu; Liangcai Wu; Feng Rao; Zhitang Song; Xinglong Ji; Dongning Yao; Yan Cheng; Shilong Lv; Sannian Song; Bo Liu; Ling Xu

doi:10.1063/1.4821769

The effect of titanium doping on the structure and phase change characteristics of Sb₄Te

Min Zhu
, Liangcai Wu^*
, Feng Rao
, Zhitang Song
, Xinglong Ji
, Dongning Yao
, Yan Cheng
, Shilong Lv
, Sannian Song
, Bo Liu
, Ling Xu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

As a growth-dominated phase change material, Sb₄Te (ST) has fast crystallization speed while thermal stability is very poor, which makes it unsuitable for application in phase change random access memory (PCRAM). After doping Ti, the crystallization temperature is greatly improved to 210.33 °C, which is much higher than that of conventional Ge₂Sb ₂Te₅ (∼150 °C), and the melting point is reduced to 540.27 °C. In addition, grain size of crystalline Ti-doped Sb ₄Te (TST) film is significantly decreased to nanoscale. Ti atom is believed to occupy the lattice site of Sb atom in TST. With good thermal stability, TST-based PCRAM cell also has fast crystallization rate of 6 ns. Furthermore, the energy consumption is also lower than that of Ge ₂Sb₂Te₅-based one. Endurance of exceeding 2E5 cycles is obtained with a resistance ratio of one order of magnitude. Therefore, Ti doping seems to be a good way to solve the contradiction between thermal stability and fast crystallization speed of Sb-Te alloys.

Original language	English
Article number	124302
Journal	Journal of Applied Physics
Volume	114
Issue number	12
DOIs	https://doi.org/10.1063/1.4821769
State	Published - 28 Sep 2013
Externally published	Yes

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@article{7d771d672c93478a986a2cc775fc264e,

title = "The effect of titanium doping on the structure and phase change characteristics of Sb4Te",

abstract = "As a growth-dominated phase change material, Sb4Te (ST) has fast crystallization speed while thermal stability is very poor, which makes it unsuitable for application in phase change random access memory (PCRAM). After doping Ti, the crystallization temperature is greatly improved to 210.33 °C, which is much higher than that of conventional Ge2Sb 2Te5 (∼150 °C), and the melting point is reduced to 540.27 °C. In addition, grain size of crystalline Ti-doped Sb 4Te (TST) film is significantly decreased to nanoscale. Ti atom is believed to occupy the lattice site of Sb atom in TST. With good thermal stability, TST-based PCRAM cell also has fast crystallization rate of 6 ns. Furthermore, the energy consumption is also lower than that of Ge 2Sb2Te5-based one. Endurance of exceeding 2E5 cycles is obtained with a resistance ratio of one order of magnitude. Therefore, Ti doping seems to be a good way to solve the contradiction between thermal stability and fast crystallization speed of Sb-Te alloys.",

author = "Min Zhu and Liangcai Wu and Feng Rao and Zhitang Song and Xinglong Ji and Dongning Yao and Yan Cheng and Shilong Lv and Sannian Song and Bo Liu and Ling Xu",

year = "2013",

month = sep,

day = "28",

doi = "10.1063/1.4821769",

language = "英语",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - The effect of titanium doping on the structure and phase change characteristics of Sb4Te

AU - Zhu, Min

AU - Wu, Liangcai

AU - Rao, Feng

AU - Song, Zhitang

AU - Ji, Xinglong

AU - Yao, Dongning

AU - Cheng, Yan

AU - Lv, Shilong

AU - Song, Sannian

AU - Liu, Bo

AU - Xu, Ling

PY - 2013/9/28

Y1 - 2013/9/28

N2 - As a growth-dominated phase change material, Sb4Te (ST) has fast crystallization speed while thermal stability is very poor, which makes it unsuitable for application in phase change random access memory (PCRAM). After doping Ti, the crystallization temperature is greatly improved to 210.33 °C, which is much higher than that of conventional Ge2Sb 2Te5 (∼150 °C), and the melting point is reduced to 540.27 °C. In addition, grain size of crystalline Ti-doped Sb 4Te (TST) film is significantly decreased to nanoscale. Ti atom is believed to occupy the lattice site of Sb atom in TST. With good thermal stability, TST-based PCRAM cell also has fast crystallization rate of 6 ns. Furthermore, the energy consumption is also lower than that of Ge 2Sb2Te5-based one. Endurance of exceeding 2E5 cycles is obtained with a resistance ratio of one order of magnitude. Therefore, Ti doping seems to be a good way to solve the contradiction between thermal stability and fast crystallization speed of Sb-Te alloys.

AB - As a growth-dominated phase change material, Sb4Te (ST) has fast crystallization speed while thermal stability is very poor, which makes it unsuitable for application in phase change random access memory (PCRAM). After doping Ti, the crystallization temperature is greatly improved to 210.33 °C, which is much higher than that of conventional Ge2Sb 2Te5 (∼150 °C), and the melting point is reduced to 540.27 °C. In addition, grain size of crystalline Ti-doped Sb 4Te (TST) film is significantly decreased to nanoscale. Ti atom is believed to occupy the lattice site of Sb atom in TST. With good thermal stability, TST-based PCRAM cell also has fast crystallization rate of 6 ns. Furthermore, the energy consumption is also lower than that of Ge 2Sb2Te5-based one. Endurance of exceeding 2E5 cycles is obtained with a resistance ratio of one order of magnitude. Therefore, Ti doping seems to be a good way to solve the contradiction between thermal stability and fast crystallization speed of Sb-Te alloys.

UR - https://www.scopus.com/pages/publications/84885417503

U2 - 10.1063/1.4821769

DO - 10.1063/1.4821769

M3 - 文章

AN - SCOPUS:84885417503

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 124302

ER -

The effect of titanium doping on the structure and phase change characteristics of Sb₄Te

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