The effect of Si co-doping on defect-induced intrinsic magnetism in GaN

Lei Zhang; Huai Zhong Xing; Yan Huang; Hui Yuan Zhang; Ji Qing Wang

doi:10.3724/sp.j.1010.2011.00229

The effect of Si co-doping on defect-induced intrinsic magnetism in GaN

Lei Zhang
, Huai Zhong Xing^*
, Yan Huang
, Hui Yuan Zhang
, Ji Qing Wang

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

Abstract

Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect were investigated. It was found that defect-induced intrinsic magnetic moment of GaN is 3 μ_B, while the magnetic moment is quenched to 2 μ_B in Si-co-doping GaN:Si. The magnetic moment decreases with the increase of the concentration of Si. The result is very helpful for experiments.

Original language	English
Pages (from-to)	229-231+249
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	30
Issue number	3
DOIs	https://doi.org/10.3724/sp.j.1010.2011.00229
State	Published - Jun 2011

Keywords

GaN:Si
Magnetism
The first principle

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10.3724/sp.j.1010.2011.00229

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@article{4e16dc16aa5944439b2fc0fa57b7c2b5,

title = "The effect of Si co-doping on defect-induced intrinsic magnetism in GaN",

abstract = "Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect were investigated. It was found that defect-induced intrinsic magnetic moment of GaN is 3 μB, while the magnetic moment is quenched to 2 μB in Si-co-doping GaN:Si. The magnetic moment decreases with the increase of the concentration of Si. The result is very helpful for experiments.",

keywords = "GaN:Si, Magnetism, The first principle",

author = "Lei Zhang and Xing, \{Huai Zhong\} and Yan Huang and Zhang, \{Hui Yuan\} and Wang, \{Ji Qing\}",

year = "2011",

month = jun,

doi = "10.3724/sp.j.1010.2011.00229",

language = "英语",

volume = "30",

pages = "229--231+249",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "3",

}

TY - JOUR

T1 - The effect of Si co-doping on defect-induced intrinsic magnetism in GaN

AU - Zhang, Lei

AU - Xing, Huai Zhong

AU - Huang, Yan

AU - Zhang, Hui Yuan

AU - Wang, Ji Qing

PY - 2011/6

Y1 - 2011/6

N2 - Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect were investigated. It was found that defect-induced intrinsic magnetic moment of GaN is 3 μB, while the magnetic moment is quenched to 2 μB in Si-co-doping GaN:Si. The magnetic moment decreases with the increase of the concentration of Si. The result is very helpful for experiments.

AB - Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect were investigated. It was found that defect-induced intrinsic magnetic moment of GaN is 3 μB, while the magnetic moment is quenched to 2 μB in Si-co-doping GaN:Si. The magnetic moment decreases with the increase of the concentration of Si. The result is very helpful for experiments.

KW - GaN:Si

KW - Magnetism

KW - The first principle

UR - https://www.scopus.com/pages/publications/79960048323

U2 - 10.3724/sp.j.1010.2011.00229

DO - 10.3724/sp.j.1010.2011.00229

M3 - 文章

AN - SCOPUS:79960048323

SN - 1001-9014

VL - 30

SP - 229-231+249

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 3

ER -

The effect of Si co-doping on defect-induced intrinsic magnetism in GaN

Abstract

Keywords

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