The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe                         12                         O                         19                          thin films synthesized using chemical solution deposition

Wenxia Dong; Yuanyuan Zhang; Jing Yang; Haili Song; Wei Bai; Xiaodong Tang

doi:10.1063/1.5049231

The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition

Wenxia Dong
, Yuanyuan Zhang
, Jing Yang
, Haili Song
, Wei Bai
, Xiaodong Tang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Highly (000l)-oriented, M-type, hexaferrite BaFe ₁₂ O ₁₉ (BaM) thin films were fabricated on La _0.7 Sr _0.3 MnO ₃ /(111)SrTiO ₃ (LSMO/STO) and (111)Pt using chemical solution deposition. The temperature dependent dielectric properties and ac conductivity of the BaM films with different film/electrode interfaces were investigated. The results show that the chemical interfaces rather than the contact interfaces in the film/electrode played a significant role in the resulting electrical properties. For both BaM films, hopping conduction accompanied by dielectric relaxation at low frequencies was observed, which can be explained by the localized hopping of electrons through energy barriers separating different Anderson localized states, i.e., multivalent Fe sites. The X-ray photoelectron spectroscopy data confirm that the Fe ²⁺ /Fe ³⁺ ratio of the BaM/LSMO was less than that of the BaM/Pt, which might lead to more difficult hopping processes and better electrical properties.

Original language	English
Article number	262902
Journal	Applied Physics Letters
Volume	113
Issue number	26
DOIs	https://doi.org/10.1063/1.5049231
State	Published - 24 Dec 2018

Access to Document

10.1063/1.5049231

Cite this

Dong, W., Zhang, Y., Yang, J., Song, H., Bai, W., & Tang, X. (2018). The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition Applied Physics Letters, 113(26), Article 262902. https://doi.org/10.1063/1.5049231

Dong, Wenxia ; Zhang, Yuanyuan ; Yang, Jing et al. / The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition In: Applied Physics Letters. 2018 ; Vol. 113, No. 26.

@article{5f173319dd43489c8765644b59694306,

title = " The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe 12 O 19 thin films synthesized using chemical solution deposition ",

abstract = " Highly (000l)-oriented, M-type, hexaferrite BaFe 12 O 19 (BaM) thin films were fabricated on La 0.7 Sr 0.3 MnO 3 /(111)SrTiO 3 (LSMO/STO) and (111)Pt using chemical solution deposition. The temperature dependent dielectric properties and ac conductivity of the BaM films with different film/electrode interfaces were investigated. The results show that the chemical interfaces rather than the contact interfaces in the film/electrode played a significant role in the resulting electrical properties. For both BaM films, hopping conduction accompanied by dielectric relaxation at low frequencies was observed, which can be explained by the localized hopping of electrons through energy barriers separating different Anderson localized states, i.e., multivalent Fe sites. The X-ray photoelectron spectroscopy data confirm that the Fe 2+ /Fe 3+ ratio of the BaM/LSMO was less than that of the BaM/Pt, which might lead to more difficult hopping processes and better electrical properties.",

author = "Wenxia Dong and Yuanyuan Zhang and Jing Yang and Haili Song and Wei Bai and Xiaodong Tang",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = dec,

day = "24",

doi = "10.1063/1.5049231",

language = "英语",

volume = "113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

Dong, W, Zhang, Y, Yang, J, Song, H, Bai, W & Tang, X 2018, ' The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition ', Applied Physics Letters, vol. 113, no. 26, 262902. https://doi.org/10.1063/1.5049231

The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition . / Dong, Wenxia; Zhang, Yuanyuan; Yang, Jing et al.
In: Applied Physics Letters, Vol. 113, No. 26, 262902, 24.12.2018.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe 12 O 19 thin films synthesized using chemical solution deposition

AU - Dong, Wenxia

AU - Zhang, Yuanyuan

AU - Yang, Jing

AU - Song, Haili

AU - Bai, Wei

AU - Tang, Xiaodong

PY - 2018/12/24

Y1 - 2018/12/24

N2 - Highly (000l)-oriented, M-type, hexaferrite BaFe 12 O 19 (BaM) thin films were fabricated on La 0.7 Sr 0.3 MnO 3 /(111)SrTiO 3 (LSMO/STO) and (111)Pt using chemical solution deposition. The temperature dependent dielectric properties and ac conductivity of the BaM films with different film/electrode interfaces were investigated. The results show that the chemical interfaces rather than the contact interfaces in the film/electrode played a significant role in the resulting electrical properties. For both BaM films, hopping conduction accompanied by dielectric relaxation at low frequencies was observed, which can be explained by the localized hopping of electrons through energy barriers separating different Anderson localized states, i.e., multivalent Fe sites. The X-ray photoelectron spectroscopy data confirm that the Fe 2+ /Fe 3+ ratio of the BaM/LSMO was less than that of the BaM/Pt, which might lead to more difficult hopping processes and better electrical properties.

AB - Highly (000l)-oriented, M-type, hexaferrite BaFe 12 O 19 (BaM) thin films were fabricated on La 0.7 Sr 0.3 MnO 3 /(111)SrTiO 3 (LSMO/STO) and (111)Pt using chemical solution deposition. The temperature dependent dielectric properties and ac conductivity of the BaM films with different film/electrode interfaces were investigated. The results show that the chemical interfaces rather than the contact interfaces in the film/electrode played a significant role in the resulting electrical properties. For both BaM films, hopping conduction accompanied by dielectric relaxation at low frequencies was observed, which can be explained by the localized hopping of electrons through energy barriers separating different Anderson localized states, i.e., multivalent Fe sites. The X-ray photoelectron spectroscopy data confirm that the Fe 2+ /Fe 3+ ratio of the BaM/LSMO was less than that of the BaM/Pt, which might lead to more difficult hopping processes and better electrical properties.

UR - https://www.scopus.com/pages/publications/85059636994

U2 - 10.1063/1.5049231

DO - 10.1063/1.5049231

M3 - 文章

AN - SCOPUS:85059636994

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262902

ER -

Dong W, Zhang Y, Yang J, Song H, Bai W , Tang X. The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition Applied Physics Letters. 2018 Dec 24;113(26):262902. doi: 10.1063/1.5049231

The effect of film/electrode interfaces on the dielectric responses of highly (000l)-oriented M-type BaFe ₁₂ O ₁₉ thin films synthesized using chemical solution deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this