The effect of doping amount of Zn on the co-evaporated SnSe thin film for photovoltaic application

In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285% Zn doping amount possesses higher electron mobility (32.69 cm²V^-1s^-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell.