Abstract
In this work, SnSe thin films were prepared by co-evaporation method with different Zn doping amount, and the comparative studies were carried out. Experimental results indicate that the SnSe thin film with 0.285% Zn doping amount possesses higher electron mobility (32.69 cm2V-1s-1), lower resistivity (1.32 Ωcm), better crystalline, larger grain size, which promotes the efficiency improvement of the SnSe thin film solar cell. The efficiency of the SnSe device is improved to 0.55% by Zn doping. These results guide better growth of SnSe thin film and contribute to the development of the SnSe thin film solar cell.
| Original language | English |
|---|---|
| Pages (from-to) | 236-244 |
| Number of pages | 9 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 24 |
| Issue number | 5-6 |
| State | Published - May 2022 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Co-evaporation
- SnSe thin film
- Solar cell
- Zn doping
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