The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

M. Bosman; Y. Zhang; C. K. Cheng; X. Li; X. Wu; K. L. Pey; C. T. Lin; Y. W. Chen; S. H. Hsu; C. H. Hsu

doi:10.1063/1.3478446

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

M. Bosman, Y. Zhang, C. K. Cheng, X. Li, X. Wu, K. L. Pey, C. T. Lin, Y. W. Chen, S. H. Hsu, C. H. Hsu

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al₂ O₃ and La₂ O₃ capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.

Original language	English
Article number	103504
Journal	Applied Physics Letters
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.3478446
State	Published - 6 Sep 2010
Externally published	Yes

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title = "The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks",

abstract = "The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2 O3 and La2 O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.",

author = "M. Bosman and Y. Zhang and Cheng, \{C. K.\} and X. Li and X. Wu and Pey, \{K. L.\} and Lin, \{C. T.\} and Chen, \{Y. W.\} and Hsu, \{S. H.\} and Hsu, \{C. H.\}",

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AU - Cheng, C. K.

AU - Li, X.

AU - Wu, X.

AU - Pey, K. L.

AU - Lin, C. T.

AU - Chen, Y. W.

AU - Hsu, S. H.

AU - Hsu, C. H.

PY - 2010/9/6

Y1 - 2010/9/6

N2 - The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2 O3 and La2 O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.

AB - The spatial distribution of chemical elements is studied in high- κ, metal-gated stacks applied in field effect transistors. Using the transmission electron microscope (TEM)-based analytical techniques electron energy-loss spectroscopy (EELS) and energy-dispersive x-ray spectroscopy, it is demonstrated that Al2 O3 and La2 O3 capping layers show distinctly different diffusion profiles. The importance of the EELS collection angle is discussed. Popular chemical distribution models that assume La-rich interface layers are rejected.

UR - https://www.scopus.com/pages/publications/77956578673

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The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

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