The development of laser-produced plasma EUV light source

De Kun Yang; Du Wang; Qiu Shi Huang; Yi Song; Jian Wu; Wen Xue Li; Zhan Shan Wang; Xia Hui Tang; Hong Xing Xu; Sheng Liu; Cheng Qun Gui

doi:10.1016/j.chip.2022.100019

The development of laser-produced plasma EUV light source

De Kun Yang, Du Wang, Qiu Shi Huang, Yi Song, Jian Wu, Wen Xue Li, Zhan Shan Wang, Xia Hui Tang, Hong Xing Xu, Sheng Liu, Cheng Qun Gui

Institute for Advanced Study in Precision Spectroscopy

Research output: Contribution to journal › Review article › peer-review

41 Scopus citations

Abstract

Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask. Historically, both theoretical studies and experiments have clearly indicated that the CO₂ laser-produced plasma (LPP) system is a promising solution for EUVL source, able to realize high conversion efficiency (CE) and output power. Currently, ASML's NXE:3400B EUV scanner configuring CO₂ LPP source system has been installed and operated at chipmaker customers. Meanwhile, other research teams have made different progresses in the development of LPP EUV sources. However, in their technologies, some critical areas need to be further improved to meet the requirements of 5 nm node and below. Critically needed improvements include higher laser power, stable droplet generation system and longer collector lifetime. In this paper, we describe the performance characteristics of the laser system, droplet generator and mirror collector for different EUV sources, and also the new development results.

Original language	English
Article number	100019
Journal	Chip
Volume	1
Issue number	3
DOIs	https://doi.org/10.1016/j.chip.2022.100019
State	Published - Sep 2022

Keywords

Extreme ultraviolet source
Laser-produced plasma
Long lifetime collector
Sn target

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10.1016/j.chip.2022.100019

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title = "The development of laser-produced plasma EUV light source",

abstract = "Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask. Historically, both theoretical studies and experiments have clearly indicated that the CO2 laser-produced plasma (LPP) system is a promising solution for EUVL source, able to realize high conversion efficiency (CE) and output power. Currently, ASML's NXE:3400B EUV scanner configuring CO2 LPP source system has been installed and operated at chipmaker customers. Meanwhile, other research teams have made different progresses in the development of LPP EUV sources. However, in their technologies, some critical areas need to be further improved to meet the requirements of 5 nm node and below. Critically needed improvements include higher laser power, stable droplet generation system and longer collector lifetime. In this paper, we describe the performance characteristics of the laser system, droplet generator and mirror collector for different EUV sources, and also the new development results.",

keywords = "Extreme ultraviolet source, Laser-produced plasma, Long lifetime collector, Sn target",

author = "Yang, \{De Kun\} and Du Wang and Huang, \{Qiu Shi\} and Yi Song and Jian Wu and Li, \{Wen Xue\} and Wang, \{Zhan Shan\} and Tang, \{Xia Hui\} and Xu, \{Hong Xing\} and Sheng Liu and Gui, \{Cheng Qun\}",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = sep,

doi = "10.1016/j.chip.2022.100019",

language = "英语",

volume = "1",

journal = "Chip",

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TY - JOUR

T1 - The development of laser-produced plasma EUV light source

AU - Yang, De Kun

AU - Wang, Du

AU - Huang, Qiu Shi

AU - Song, Yi

AU - Wu, Jian

AU - Li, Wen Xue

AU - Wang, Zhan Shan

AU - Tang, Xia Hui

AU - Xu, Hong Xing

AU - Liu, Sheng

AU - Gui, Cheng Qun

PY - 2022/9

Y1 - 2022/9

N2 - Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask. Historically, both theoretical studies and experiments have clearly indicated that the CO2 laser-produced plasma (LPP) system is a promising solution for EUVL source, able to realize high conversion efficiency (CE) and output power. Currently, ASML's NXE:3400B EUV scanner configuring CO2 LPP source system has been installed and operated at chipmaker customers. Meanwhile, other research teams have made different progresses in the development of LPP EUV sources. However, in their technologies, some critical areas need to be further improved to meet the requirements of 5 nm node and below. Critically needed improvements include higher laser power, stable droplet generation system and longer collector lifetime. In this paper, we describe the performance characteristics of the laser system, droplet generator and mirror collector for different EUV sources, and also the new development results.

AB - Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask. Historically, both theoretical studies and experiments have clearly indicated that the CO2 laser-produced plasma (LPP) system is a promising solution for EUVL source, able to realize high conversion efficiency (CE) and output power. Currently, ASML's NXE:3400B EUV scanner configuring CO2 LPP source system has been installed and operated at chipmaker customers. Meanwhile, other research teams have made different progresses in the development of LPP EUV sources. However, in their technologies, some critical areas need to be further improved to meet the requirements of 5 nm node and below. Critically needed improvements include higher laser power, stable droplet generation system and longer collector lifetime. In this paper, we describe the performance characteristics of the laser system, droplet generator and mirror collector for different EUV sources, and also the new development results.

KW - Extreme ultraviolet source

KW - Laser-produced plasma

KW - Long lifetime collector

KW - Sn target

UR - https://www.scopus.com/pages/publications/85137394485

U2 - 10.1016/j.chip.2022.100019

DO - 10.1016/j.chip.2022.100019

M3 - 文献综述

AN - SCOPUS:85137394485

SN - 2709-4723

VL - 1

JO - Chip

JF - Chip

IS - 3

M1 - 100019

ER -

The development of laser-produced plasma EUV light source

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Keywords

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