Abstract
In this work we studied 65-nm-thick poly(vinylidene fluoride- trifluoroethylene) ferroelectric polymers films grown by Langmuir-Blodgett onto silicon substrates. Three dielectric anomalies have been unambiguously evidenced. The high temperature one near 380 K corresponds to the ferroelectric-paraelectric transition. The low temperature one near 270 K which is characterized by a relaxation is attributed to structural defects in the crystalline phase leading to inhomogeneous strains detected by x-ray diffraction. At approximately 320 K, a Debye-like relaxation is clearly evidenced. Possible origins for this later relaxation are discussed.
| Original language | English |
|---|---|
| Article number | 104113 |
| Journal | Journal of Applied Physics |
| Volume | 106 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2009 |
| Externally published | Yes |