The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

B. B. Tian; Z. H. Chen; A. Q. Jiang; X. L. Zhao; B. L. Liu; J. L. Wang; L. Han; Sh Sun; J. L. Sun; X. J. Meng; J. H. Chu

doi:10.1063/1.4816749

The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

B. B. Tian^*
, Z. H. Chen
, A. Q. Jiang
, X. L. Zhao
, B. L. Liu
, J. L. Wang
, L. Han
, Sh Sun
, J. L. Sun
, X. J. Meng
, J. H. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The polarization switching behavior in poly(vinylidene fluoride- trifluoroethylene) thin films is studied by using a pulse transient current method. The dependence of the domain switching current on the coercive electric field was investigated. The charging current around the coercive field was found to be limited by domain switching instead of the series resistor in the measurement circuit because of the slow polarization switching in the films. The domain-switching process was explained by a creep model wherein the two-dimension domain walls motion in the transverse direction dominates the polarization switching process.

Original language	English
Article number	042909
Journal	Applied Physics Letters
Volume	103
Issue number	4
DOIs	https://doi.org/10.1063/1.4816749
State	Published - 22 Jul 2013
Externally published	Yes

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title = "The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films",

abstract = "The polarization switching behavior in poly(vinylidene fluoride- trifluoroethylene) thin films is studied by using a pulse transient current method. The dependence of the domain switching current on the coercive electric field was investigated. The charging current around the coercive field was found to be limited by domain switching instead of the series resistor in the measurement circuit because of the slow polarization switching in the films. The domain-switching process was explained by a creep model wherein the two-dimension domain walls motion in the transverse direction dominates the polarization switching process.",

author = "Tian, \{B. B.\} and Chen, \{Z. H.\} and Jiang, \{A. Q.\} and Zhao, \{X. L.\} and Liu, \{B. L.\} and Wang, \{J. L.\} and L. Han and Sh Sun and Sun, \{J. L.\} and Meng, \{X. J.\} and Chu, \{J. H.\}",

year = "2013",

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doi = "10.1063/1.4816749",

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volume = "103",

journal = "Applied Physics Letters",

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T1 - The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

AU - Tian, B. B.

AU - Chen, Z. H.

AU - Jiang, A. Q.

AU - Zhao, X. L.

AU - Liu, B. L.

AU - Wang, J. L.

AU - Han, L.

AU - Sun, Sh

AU - Sun, J. L.

AU - Meng, X. J.

AU - Chu, J. H.

PY - 2013/7/22

Y1 - 2013/7/22

N2 - The polarization switching behavior in poly(vinylidene fluoride- trifluoroethylene) thin films is studied by using a pulse transient current method. The dependence of the domain switching current on the coercive electric field was investigated. The charging current around the coercive field was found to be limited by domain switching instead of the series resistor in the measurement circuit because of the slow polarization switching in the films. The domain-switching process was explained by a creep model wherein the two-dimension domain walls motion in the transverse direction dominates the polarization switching process.

AB - The polarization switching behavior in poly(vinylidene fluoride- trifluoroethylene) thin films is studied by using a pulse transient current method. The dependence of the domain switching current on the coercive electric field was investigated. The charging current around the coercive field was found to be limited by domain switching instead of the series resistor in the measurement circuit because of the slow polarization switching in the films. The domain-switching process was explained by a creep model wherein the two-dimension domain walls motion in the transverse direction dominates the polarization switching process.

UR - https://www.scopus.com/pages/publications/84884994305

U2 - 10.1063/1.4816749

DO - 10.1063/1.4816749

M3 - 文章

AN - SCOPUS:84884994305

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042909

ER -

The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

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