@inproceedings{6e6bbe62b84c4d79af19218a598b0c3b,
title = "The charge character in the double-barrier quantum dots in well hybrid structure",
abstract = "We present the carrier transport properties in the double-barrier InAs quantum dots and InGaAs quantum well hybrid structure of the photoelectric device and analyze the capacitance hysteresis phenomenon. Due to the coupling effect among multiple quantum dots, the I-V and C-V curves measured of the photoelectric device shows the capacitance changes with the light intensity. We analyze the relationships between charge and discharge states of the hysteresis curves further. When a dumping readout designed and applied, it shows a response enhanced and the sensitivity detected to push more weak light level. It indicates the photoelectric device would be a promising candidate both in quantum information applications and highly sensitive imaging applications operating.",
keywords = "charge storage and discharge, dumping, electron transfer, hysteresis, quantum dots and quantum well hybrid structure",
author = "Jin, \{X. B.\} and Guo, \{F. M.\} and Yue, \{F. Y.\}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 ; Conference date: 07-04-2015 Through 11-04-2015",
year = "2015",
month = jul,
day = "1",
doi = "10.1109/NEMS.2015.7147352",
language = "英语",
series = "2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "40--43",
booktitle = "2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015",
address = "美国",
}