The characterization of CuInSe2 thin films by sequential processes of sputtering and selenization

Jun Zhang; Hongmei Deng; Pingxiong Yang; Jun He; Tantan Liu; Lin Sun; Junhao Chu

doi:10.1117/12.2053499

The characterization of CuInSe₂ thin films by sequential processes of sputtering and selenization

Jun Zhang, Hongmei Deng, Pingxiong Yang, Jun He, Tantan Liu, Lin Sun, Junhao Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Ternary CuInSe₂ (CIS) thin films were deposited on glass substrates using a binary CuIn alloy target and an elemental Cu target by employing radio-frequency (RF) magnetron sputtering process and post-selenization process. The selenization procedure is carried out within a partially close-spaced graphite box. The Cu content in CIS thin films can be controlled by different sputtering time of Cu target. The result of energy dispersive X-ray spectroscopy (EDX) indicated that the CIS thin film prepared by single CuIn alloys target had significantly composition deviation. Combined with the X-ray diffraction (XRD) and Raman spectra results showed that all CIS thin films have chalcopyrite structure. Further transmission spectra demonstrated that the optical band gap of CIS thin film is about 1.0 eV.

Original language	English
Title of host publication	Eighth International Conference on Thin Film Physics and Applications
DOIs	https://doi.org/10.1117/12.2053499
State	Published - 2013
Externally published	Yes
Event	8th International Conference on Thin Film Physics and Applications, TFPA 2013 - Shanghai, China Duration: 20 Sep 2013 → 23 Sep 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9068
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	8th International Conference on Thin Film Physics and Applications, TFPA 2013
Country/Territory	China
City	Shanghai
Period	20/09/13 → 23/09/13

Keywords

CuInSe
Rapid thermal process
Sputtering

Access to Document

10.1117/12.2053499

Cite this

Zhang, J., Deng, H., Yang, P., He, J., Liu, T., Sun, L., & Chu, J. (2013). The characterization of CuInSe₂ thin films by sequential processes of sputtering and selenization. In Eighth International Conference on Thin Film Physics and Applications Article 90681R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068). https://doi.org/10.1117/12.2053499

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title = "The characterization of CuInSe2 thin films by sequential processes of sputtering and selenization",

abstract = "Ternary CuInSe2 (CIS) thin films were deposited on glass substrates using a binary CuIn alloy target and an elemental Cu target by employing radio-frequency (RF) magnetron sputtering process and post-selenization process. The selenization procedure is carried out within a partially close-spaced graphite box. The Cu content in CIS thin films can be controlled by different sputtering time of Cu target. The result of energy dispersive X-ray spectroscopy (EDX) indicated that the CIS thin film prepared by single CuIn alloys target had significantly composition deviation. Combined with the X-ray diffraction (XRD) and Raman spectra results showed that all CIS thin films have chalcopyrite structure. Further transmission spectra demonstrated that the optical band gap of CIS thin film is about 1.0 eV.",

keywords = "CuInSe, Rapid thermal process, Sputtering",

author = "Jun Zhang and Hongmei Deng and Pingxiong Yang and Jun He and Tantan Liu and Lin Sun and Junhao Chu",

year = "2013",

doi = "10.1117/12.2053499",

language = "英语",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Eighth International Conference on Thin Film Physics and Applications",

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Zhang, J, Deng, H, Yang, P, He, J, Liu, T, Sun, L & Chu, J 2013, The characterization of CuInSe₂ thin films by sequential processes of sputtering and selenization. in Eighth International Conference on Thin Film Physics and Applications., 90681R, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9068, 8th International Conference on Thin Film Physics and Applications, TFPA 2013, Shanghai, China, 20/09/13. https://doi.org/10.1117/12.2053499

The characterization of CuInSe₂ thin films by sequential processes of sputtering and selenization. / Zhang, Jun; Deng, Hongmei; Yang, Pingxiong et al.
Eighth International Conference on Thin Film Physics and Applications. 2013. 90681R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9068).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The characterization of CuInSe2 thin films by sequential processes of sputtering and selenization

AU - Zhang, Jun

AU - Deng, Hongmei

AU - Yang, Pingxiong

AU - He, Jun

AU - Liu, Tantan

AU - Sun, Lin

AU - Chu, Junhao

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AB - Ternary CuInSe2 (CIS) thin films were deposited on glass substrates using a binary CuIn alloy target and an elemental Cu target by employing radio-frequency (RF) magnetron sputtering process and post-selenization process. The selenization procedure is carried out within a partially close-spaced graphite box. The Cu content in CIS thin films can be controlled by different sputtering time of Cu target. The result of energy dispersive X-ray spectroscopy (EDX) indicated that the CIS thin film prepared by single CuIn alloys target had significantly composition deviation. Combined with the X-ray diffraction (XRD) and Raman spectra results showed that all CIS thin films have chalcopyrite structure. Further transmission spectra demonstrated that the optical band gap of CIS thin film is about 1.0 eV.

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